Silicon N Channel MOSFET Minos IRF3710STR Ideal for SMPS and General Purpose Electronic Applications
Key Attributes
Model Number:
IRF3710STR
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+175℃
RDS(on):
21mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
260pF
Number:
1 N-channel
Output Capacitance(Coss):
610pF
Input Capacitance(Ciss):
2.7nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
IRF3710STR
Package:
TO-263
Product Description
Product Description
The IRF3710STR is a silicon N-Channel Enhanced MOSFET utilizing advanced MOSFET technology to reduce conduction loss, improve switching performance, and enhance avalanche energy. This transistor is ideal for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key advantages include reduced conduction loss, faster switching, 100% avalanche testing, and improved dv/dt capability.
Product Attributes
- Brand: www.mns-kx.com (Implied by URL)
- Origin: Shenzhen Minos (Implied by Contact Information)
- Material: Silicon N-Channel (Derived from text)
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit | Min. | Typ. | Max. | |
| Absolute Maximum Ratings | VDSS | VGS= 0V | 100 | V | ||||
| ID | TC = 25 | 70 | A | |||||
| IDM | Figure 6 | A | ||||||
| VGSS | 20 | V | ||||||
| EAS | 1943 | mJ | ||||||
| EAR | 36 | mJ | ||||||
| Electrical Characteristics | V(BR)DSS | VGS= 0V, ID = 250A | 100 | V | ||||
| IDSS | VDS = 100V, VGS = 0V, TJ = 25 | 1 | A | |||||
| IGSS | VGS= +20V,VDS=0V | 100 | nA | |||||
| VGS(th) | VDS = VGS, ID = 250A | 2.0 | 4.0 | V | ||||
| RDS(on) | VGS = 10V, ID= 28A | 17 | 21 | m | ||||
| gfs | VDS= 10V, ID = 28A | 85 | S | |||||
| Ciss | VGS= 0V, VDS = 25V, f = 1.0MHz | 2700 | pF | |||||
| Dynamic Characteristics | Coss | 610 | pF | |||||
| Crss | 260 | pF | ||||||
| Qg | VDD =50V, ID= 28A, VGS = 0 to 10V | 60 | nC | |||||
| td(on) | VDD = 50V, ID=28A, VGS= 10V, RG = 2.5 | 20 | ns | |||||
| Body Diode Characteristics | IS | TC= 25 | 70 | A | ||||
| ISM | 230 | |||||||
| VSD | TJ= 25, ISD = 28A, VGS = 0V | 1.5 | V | |||||
| trr | VGS = 0V,IS = 28A, diF/dt =100A /s | 195 | ns | |||||
| Thermal Resistance | RthJC | 0.75 | /W | |||||
| RthJA | 62 | /W |
2410010300_Minos-IRF3710STR_C33129606.pdf
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