High Current Minos IRFZ24N N-Channel MOSFET 60V 30A TO220 Package for Power Switching Solutions
Key Attributes
Model Number:
IRFZ24N
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+175℃
RDS(on):
40mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
66pF
Number:
1 N-channel
Input Capacitance(Ciss):
670pF
Pd - Power Dissipation:
44W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
IRFZ24N
Package:
TO-220
Product Description
Product Overview
The IRFZ24N is a N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation.
Product Attributes
- Brand: MNS-KX
- Package: TO-220
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Key Characteristics | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Continuous Drain Current | ID | 30 | A | |||
| RDS(ON) | VGS=10V | 25 | 30 | m | ||
| RDS(ON) | VGS=4.5V | 30 | 40 | m | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 30 | A | |||
| Drain Current-Pulsed | IDM | Note 1 | 80 | A | ||
| Maximum Power Dissipation | PD | Tc=25 | 44 | W | ||
| Single pulse avalanche energy | EAS | Note 2 | 56 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 3.4 | /W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.3 | 1.8 | 2.3 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=10A, Note 3 | - | 25 | 30 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=10A, Note 3 | - | 30 | 40 | m |
| Forward Transconductance | gFS | VDS=5V,ID=10A | - | 11 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 670 | - | pF |
| Output Capacitance | Coss | - | 76 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 66 | - | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=10A, VGS=10V,RGEN=10, Note 4 | - | 19.2 | - | nS |
| Turn-on Rise Time | tr | Note 4 | - | 6.4 | - | nS |
| Turn-Off Delay Time | td(off) | Note 4 | - | 29.2 | - | nS |
| Turn-Off Fall Time | tf | Note 4 | - | 8.2 | - | nS |
| Total Gate Charge | Qg | VDS=48V,ID=10A, VGS=10V | - | 21 | - | nC |
| Gate-Source Charge | Qgs | - | 5 | - | nC | |
| Gate-Drain Charge | Qg d | - | 6.5 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=20A | - | - | 1.2 | V |
| Reverse Recovery Time | Trr | Tj=25,IF=10A,di/dt=100A/uS, note3 | - | 33.6 | - | nS |
| Reverse Recovery Charge | Qrr | - | 32.1 | - | nC | |
2410122012_Minos-IRFZ24N_C20624233.pdf
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