Minos MPF5N50 F Power MOSFET Silicon N Channel Suitable for High Speed Switching and General Purpose
Product Overview
The MPF5N50 is a silicon N-Channel Enhanced Power MOSFET designed using advanced technology to minimize conduction losses, enhance switching performance, and improve avalanche energy. It is suitable for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Material: Silicon N-Channel
- Certifications: RoHS product
Technical Specifications
| Parameter | Value | Units | Conditions |
|---|---|---|---|
| General Features | |||
| VDS | 500 | V | |
| ID | 5 | A | |
| RDS(ON) | <1.57 | @VGS=10V | |
| Absolute Maximum Ratings | |||
| VDSS | 500 | V | (Tc=25 unless otherwise specified) |
| ID (Continuous) | 5 | A | (Tc=25) |
| ID (Continuous) | 3.5 | A | (TC = 100 C) |
| IDM (Pulsed) | 20 | A | (Note1) |
| VGS | 30 | V | |
| EAS (Single Pulse Avalanche Energy) | 350 | mJ | (Note2) |
| dv/dt (Peak Diode Recovery) | 5.0 | V/ns | (Note3) |
| PD (TO-220, TO-263) | 78 | W | (Tc=25) |
| PD (TO-220F) | 30 | W | (Tc=25) |
| TJ, Tstg (Operating & Storage Temp) | -55 to 150 | ||
| TL (Max Temp for Soldering) | 300 | ||
| Thermal Characteristics (No FullPAK) | |||
| RJC (Junction-to-Case) | 1.6 | /W | |
| RJA (Junction-to-Ambient) | 62.5 | /W | |
| Thermal Characteristics (TO-220F) | |||
| RJC (Junction-to-Case) | 4.2 | /W | |
| RJA (Junction-to-Ambient) | 62.5 | /W | |
| OFF Characteristics | |||
| VDSS (Drain to Source Breakdown Voltage) | 500 | V | VGS=0V, ID=250A |
| IDSS (Drain to Source Leakage Current) | 1 | A | VDS=500V,VGS=0V, Tj = 25 |
| IDSS (Drain to Source Leakage Current) | 100 | A | VDS=400V,VGS=0V, Tj = 125 |
| IGSS(F) (Gate to Source Forward Leakage) | 100 | nA | VGS =+30V |
| IGSS(R) (Gate to Source Reverse Leakage) | 100 | nA | VGS =-30V |
| ON Characteristics | |||
| RDS(ON) (Drain-to-Source On-Resistance) | 1.57 | VGS=10V, ID=2.5A (Note4) | |
| RDS(ON) (Drain-to-Source On-Resistance) | 1.31 | VGS=10V, ID=2.5A (Note4) | |
| VGS(TH) (Gate Threshold Voltage) | 2.0 - 4.0 | V | VDS = VGS, ID = 250A (Note4) |
| gfs (Forward Transconductance) | 3.5 | S | VDS=15V, ID =5A (Note4) |
| Dynamic Characteristics | |||
| Ciss (Input Capacitance) | 690 | PF | VGS = 0V, VDS =25V, f = 1.0MHz |
| Coss (Output Capacitance) | 65 | PF | VGS = 0V, VDS =25V, f = 1.0MHz |
| Crss (Reverse Transfer Capacitance) | 2.45 | PF | VGS = 0V, VDS =25V, f = 1.0MHz |
| Switching Characteristics | |||
| td(ON) (Turn-on Delay Time) | 13 | ns | ID =5A, VDD = 250V, VGS = 10V, RG =5 |
| tr (Rise Time) | 45 | ns | ID =5A, VDD = 250V, VGS = 10V, RG =5 |
| td(OFF) (Turn-Off Delay Time) | 50 | ns | ID =5A, VDD = 250V, VGS = 10V, RG =5 |
| tf (Fall Time) | 49 | ns | ID =5A, VDD = 250V, VGS = 10V, RG =5 |
| Qg (Total Gate Charge) | 16.8 | nC | ID =5A, VDD =400V, VGS = 10V |
| Qgs (Gate to Source Charge) | 5.5 | nC | ID =5A, VDD =400V, VGS = 10V |
| Qgd (Gate to Drain (Miller)Charge) | 4.3 | nC | ID =5A, VDD =400V, VGS = 10V |
| Source-Drain Diode Characteristics | |||
| IS (Continuous Source Current) | 5 | A | TC=25 C |
| ISM (Maximum Pulsed Current) | 20 | A | |
| VSD (Diode Forward Voltage) | 1.2 | V | IS=5A, VGS=0V (Note4) |
| Trr (Reverse Recovery Time) | 264 | ns | IS=5A, Tj = 25C, dIF/dt=100A/us, VGS=0V |
| Qrr (Reverse Recovery Charge) | 1950 | nC | IS=5A, Tj = 25C, dIF/dt=100A/us, VGS=0V |
| Ordering Information | |||
| Product Code | Package | Packing | Ordering Code |
| MP5N50 | TO-220 | Tube | MP5N50-P |
| MP5N50S | TO-263 | Tube/Reel | MP5N50-S |
| MPF5N50 | TO-220F | Tube | MPF5N50-F |
2508261540_Minos-MPF5N50-F_C50646514.pdf
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