Minos MPF5N50 F Power MOSFET Silicon N Channel Suitable for High Speed Switching and General Purpose

Key Attributes
Model Number: MPF5N50-F
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
RDS(on):
1.31Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.45pF
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
690pF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
16.8nC@10V
Mfr. Part #:
MPF5N50-F
Package:
TO-220F
Product Description

Product Overview

The MPF5N50 is a silicon N-Channel Enhanced Power MOSFET designed using advanced technology to minimize conduction losses, enhance switching performance, and improve avalanche energy. It is suitable for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.

Product Attributes

  • Brand: MNS (derived from www.mns-kx.com)
  • Material: Silicon N-Channel
  • Certifications: RoHS product

Technical Specifications

ParameterValueUnitsConditions
General Features
VDS500V
ID5A
RDS(ON)<1.57@VGS=10V
Absolute Maximum Ratings
VDSS500V(Tc=25 unless otherwise specified)
ID (Continuous)5A(Tc=25)
ID (Continuous)3.5A(TC = 100 C)
IDM (Pulsed)20A(Note1)
VGS30V
EAS (Single Pulse Avalanche Energy)350mJ(Note2)
dv/dt (Peak Diode Recovery)5.0V/ns(Note3)
PD (TO-220, TO-263)78W(Tc=25)
PD (TO-220F)30W(Tc=25)
TJ, Tstg (Operating & Storage Temp)-55 to 150
TL (Max Temp for Soldering)300
Thermal Characteristics (No FullPAK)
RJC (Junction-to-Case)1.6/W
RJA (Junction-to-Ambient)62.5/W
Thermal Characteristics (TO-220F)
RJC (Junction-to-Case)4.2/W
RJA (Junction-to-Ambient)62.5/W
OFF Characteristics
VDSS (Drain to Source Breakdown Voltage)500VVGS=0V, ID=250A
IDSS (Drain to Source Leakage Current)1AVDS=500V,VGS=0V, Tj = 25
IDSS (Drain to Source Leakage Current)100AVDS=400V,VGS=0V, Tj = 125
IGSS(F) (Gate to Source Forward Leakage)100nAVGS =+30V
IGSS(R) (Gate to Source Reverse Leakage)100nAVGS =-30V
ON Characteristics
RDS(ON) (Drain-to-Source On-Resistance)1.57VGS=10V, ID=2.5A (Note4)
RDS(ON) (Drain-to-Source On-Resistance)1.31VGS=10V, ID=2.5A (Note4)
VGS(TH) (Gate Threshold Voltage)2.0 - 4.0VVDS = VGS, ID = 250A (Note4)
gfs (Forward Transconductance)3.5SVDS=15V, ID =5A (Note4)
Dynamic Characteristics
Ciss (Input Capacitance)690PFVGS = 0V, VDS =25V, f = 1.0MHz
Coss (Output Capacitance)65PFVGS = 0V, VDS =25V, f = 1.0MHz
Crss (Reverse Transfer Capacitance)2.45PFVGS = 0V, VDS =25V, f = 1.0MHz
Switching Characteristics
td(ON) (Turn-on Delay Time)13nsID =5A, VDD = 250V, VGS = 10V, RG =5
tr (Rise Time)45nsID =5A, VDD = 250V, VGS = 10V, RG =5
td(OFF) (Turn-Off Delay Time)50nsID =5A, VDD = 250V, VGS = 10V, RG =5
tf (Fall Time)49nsID =5A, VDD = 250V, VGS = 10V, RG =5
Qg (Total Gate Charge)16.8nCID =5A, VDD =400V, VGS = 10V
Qgs (Gate to Source Charge)5.5nCID =5A, VDD =400V, VGS = 10V
Qgd (Gate to Drain (Miller)Charge)4.3nCID =5A, VDD =400V, VGS = 10V
Source-Drain Diode Characteristics
IS (Continuous Source Current)5ATC=25 C
ISM (Maximum Pulsed Current)20A
VSD (Diode Forward Voltage)1.2VIS=5A, VGS=0V (Note4)
Trr (Reverse Recovery Time)264nsIS=5A, Tj = 25C, dIF/dt=100A/us, VGS=0V
Qrr (Reverse Recovery Charge)1950nCIS=5A, Tj = 25C, dIF/dt=100A/us, VGS=0V
Ordering Information
Product CodePackagePackingOrdering Code
MP5N50TO-220TubeMP5N50-P
MP5N50STO-263Tube/ReelMP5N50-S
MPF5N50TO-220FTubeMPF5N50-F

2508261540_Minos-MPF5N50-F_C50646514.pdf

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