NPN Darlington Transistor Minos TIP142 for General Purpose Switching and Amplification Applications
Key Attributes
Model Number:
TIP142
Product Custom Attributes
Current - Collector Cutoff:
1mA
Pd - Power Dissipation:
80W
DC Current Gain:
1000
Type:
NPN
Current - Collector(Ic):
10A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-
Mfr. Part #:
TIP142
Package:
TO-247
Product Description
Product Overview
The NPN Darlington Transistor is a semiconductor device designed for general-purpose applications. It offers high current gain and is suitable for various switching and amplification tasks within its specified operating limits. Key applications include power control and signal amplification where a high-gain transistor is required.
Product Attributes
- Brand: MNS (Shenzhen Minos)
- Origin: China (Shenzhen)
Technical Specifications
| Parameter | Symbol | Description | Min | Typical | Max | Unit | Test Conditions |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Sustaining Voltage | VCEO(SUS) | Collector-Emitter Sustaining Voltage | 100 | V | IC=30mA, IB=0 | ||
| Collector-Emitter Cutoff Current | ICEO | Collector-Emitter Cutoff Current | 1000 | A | VCE=50V, IB=0 | ||
| Collector-Base Cutoff Current | ICBO | Collector-Base Cutoff Current | 500 | A | VCB=100V, IE=0 | ||
| Emitter-Base Cutoff Current | IEBO | Emitter-Base Cutoff Current | 0.15 | mA | VEB=5V,IC=0 | ||
| DC Current Gain | HFE(1) | DC Current Gain | 1000 | VCE=4V, IC=5A | |||
| DC Current Gain | HFE(2) | DC Current Gain | 500 | VCE=4V, IC=10A | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | Collector-Emitter Saturation Voltage | 2.5 | V | IC=5A,IB=10mA | ||
| Base-Emitter Saturation Voltage | VBE(sat) | Base-Emitter Saturation Voltage | 2.5 | V | IC=10A,IB=40mA | ||
| Base-Emitter On Voltage | VBE(on) | Base-Emitter On Voltage | 2 | V | VCE=4V, IC=10A | ||
| Delay Time | tD | Delay Time | 1 | S | Vcc=30V,IC=5A IB=20mAIB1=IB2 RL=6 | ||
| Rise Time | tR | Rise Time | 2 | S | Vcc=30V,IC=5A IB=20mAIB1=IB2 RL=6 | ||
| Storage Time | tS | Storage Time | 2 | S | Vcc=30V,IC=5A IB=20mAIB1=IB2 RL=6 | ||
| Fall Time | tF | Fall Time | 3 | S | Vcc=30V,IC=5A IB=20mAIB1=IB2 RL=6 |
| Parameter | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Storage Temperature | Tstg | -55 to 150 | ||
| Junction Temperature | Tj | 150 | ||
| Collector Power Dissipation | PC | 80 | W | Tc=25 |
| Collector-Base Voltage | VCBO | 100 | V | |
| Collector-Emitter Voltage | VCEO | 100 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Collector Current (DC) | IC | 10 | A | |
| Collector Current (Pulse) | IC | 15 | A | |
| Base Current | IB | 0.5 | A |
Package Information:
- Pin 1: Base (B)
- Pin 2: Collector (C)
- Pin 3: Emitter (E)
Notes:
- Exceeding the maximum ratings may cause permanent damage and affect device dependability. Design circuits within absolute maximum ratings.
- When installing a heat sink, pay attention to torsional moment and smoothness.
- MOSFETs are sensitive to static electricity; protect them during use.
- Shenzhen Minos reserves the right to make changes without prior notice.
Contact Information:
- Company: Shenzhen Minos Technology Co., Ltd. (Headquarters)
- Address: 22B-22C, Tianmian City Building, 4026 Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
- Postal Code: 518025
- Phone: 0755-83273777
2410121439_Minos-TIP142_C22389979.pdf
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