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quality Resistor Equipped Transistor Nexperia PDTD113ZT215 NPN Type with 10 Percent Resistor Ratio Tolerance factory
quality Resistor Equipped Transistor Nexperia PDTD113ZT215 NPN Type with 10 Percent Resistor Ratio Tolerance factory

Resistor Equipped Transistor Nexperia PDTD113ZT215 NPN Type with 10 Percent Resistor Ratio Tolerance

Key Attributes
Model Number: PDTD113ZT,215
Product Custom Attributes
Input Resistor:
1kΩ
Resistor Ratio:
10
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTD113ZT,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PDTD113ZT is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It features built-in bias resistors, which simplify circuit design, reduce component count, and lower pick-and-place costs. With a 500 mA output current capability and a 10% resistor ratio tolerance, it serves as a cost-effective alternative for digital applications, enabling control of IC inputs and switching of loads.

Product Attributes

  • Brand: Nexperia
  • Product Type: Resistor-Equipped Transistor (RET)
  • Technology: NPN
  • Package Type: SOT23
  • Qualification: Non-automotive qualified (as per revision history)

Technical Specifications

Parameter Conditions Min Typ Max Unit
Collector-Emitter Voltage (VCEO) Open base - - 50 V
Output Current (IO) - - - 500 mA
Bias Resistor R1 (Input) - 0.7 1 1.3 k
Bias Resistor Ratio R2/R1 Tamb = 25 C 9 10 11 -
Collector-Base Voltage (VCBO) Open emitter - - 50 V
Emitter-Base Voltage (VEBO) Open collector - - 5 V
Input Voltage (VI) - -10 - -5 V
Total Power Dissipation (Ptot) Tamb 25 C - - 250 mW
Junction Temperature (Tj) - - - 150 C
Ambient Temperature (Tamb) - -65 - 150 C
Storage Temperature (Tstg) - -65 - 150 C
Thermal Resistance (Rth(j-a)) In free air [1] - - 500 K/W
Collector-Base Cut-off Current (ICBO) VCB = 40 V; IE = 0 A; Tamb = 25 C - - 100 nA
Collector-Emitter Cut-off Current (ICEO) VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
Collector-Emitter Cut-off Current (ICEO) VCE = 50 V; IB = 0 A; Tamb = 25 C - - 0.5 A
Emitter-Base Cut-off Current (IEBO) VEB = 5 V; IC = 0 A; Tamb = 25 C - - 0.8 mA
DC Current Gain (hFE) VCE = 5 V; IC = 50 mA; Tamb = 25 C 70 - - -
Collector-Emitter Saturation Voltage (VCEsat) IC = 50 mA; IB = 2.5 mA; Tamb = 25 C - - 300 mV
Off-State Input Voltage (VI(off)) VCE = 5 V; IC = 100 A; Tamb = 25 C 0.3 0.6 1 V
On-State Input Voltage (VI(on)) VCE = 0.3 V; IC = 20 mA; Tamb = 25 C 0.4 0.8 1.4 V
Collector Capacitance (Cc) VCB = 10 V; IE = 0 A; ie = 0 A; f = 100 MHz; Tamb = 25 C - 7 - pF

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.


2410010331_Nexperia-PDTD113ZT-215_C168861.pdf

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