NPN PNP Matched Silicon Bipolar Epitaxial Planar Power Amplifier Transistor Minos MJL21195 for Audio
Product Overview
This is a silicon bipolar epitaxial planar NPN-PNP matched power amplifier transistor designed for high-fidelity audio applications. It offers a large collector current of Ic=16A and a high collector-emitter voltage of VCEO250V. The transistor features a wide safe operating area (3.2A/80V @ 1 Second) and excellent frequency characteristics (fT>20MHz), making it suitable for output stages of high-fidelity audio amplifiers exceeding 100W. It is designed for continuous load operation under high temperature, high voltage, and large current conditions, withstanding significant temperature variations. However, reliability may be reduced when operating at maximum current, temperature, and voltage.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Material: Silicon Bipolar Epitaxial Planar
- Type: NPN-PNP Matched Power Amplifier Transistor
- Package: TO-264
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions | Min | Typical | Max |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25) | |||||||
| Collector-Emitter Voltage | VCBO | 330 | V | ||||
| Collector-Emitter Voltage | VCEO | 250 | V | ||||
| Emitter-Base Voltage | VEBO | 5.0 | V | ||||
| Collector Current | IC | 16.0 | A | ||||
| Base Current | IB | 5.0 | A | ||||
| Collector Power Dissipation | PC | 250 | W | (Tc=25) | |||
| Junction Temperature | Tj | 10 | |||||
| Storage Temperature Range | TSTG | -55~150 | |||||
| Electrical Characteristics (Tc=25) | |||||||
| Collector-Base Breakdown Leakage | ICBO | uA | VCB=250V; IE=0 | 5.0 | |||
| Emitter-Base Breakdown Leakage | IEBO | uA | VEB=5V; Ic=0 | 5.0 | |||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 250 | V | IC=50mA,IB=0 | 300 | ||
| Gain | hFE | VCE=5V; IC=1A | 75 | 150 | |||
| Gain | hFE(2) | VCE=5V; IC=8A | 25 | 100 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | V | IC=8A; IB=0.8A | 1.4 | |||
| Base-Emitter Saturation Voltage | VBE | V | VCE=5V;IC=8A | 2.2 | |||
| Characteristic Frequency | fT | 4 | MHz | VCE=5V; IC=1A | |||
| Typical Characteristics | |||||||
| Thermal Resistance (Junction to Case) | RJC | /W | 0.35 | ||||
Notes:
- Exceeding maximum ratings may cause permanent device failure. Design circuits to stay within absolute maximum ratings.
- When installing heat sinks, pay attention to torsional moment and smoothness.
- MOSFETs are sensitive to static electricity; protect devices from static discharge during use.
- Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
Contact Information:
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026, Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Phone: 0755-83273777
2410121321_Minos-MJL21195_C19189956.pdf
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