Power Switching Minos IRFZ44N N Channel MOSFET with Low RDS ON and High Current Handling Capability
Key Attributes
Model Number:
IRFZ44N
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
12mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
100pF
Input Capacitance(Ciss):
910pF
Pd - Power Dissipation:
87W
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
IRFZ44N
Package:
TO-220
Product Description
Product Description
The IRFZ44N is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation. The device is 100% UIS and DVDS tested.
Product Attributes
- Brand: MNS-KX (implied by www.mns-kx.com)
- Package: TO-220
- Certifications: 100% UIS TESTED, 100% DVDS TESTED
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 60 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 200 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 87 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 120 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 1.72 | /W | |||
| Electrical Characteristics (TA=25unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=25A (Note 3) | - | 12 | 15 | mΩ |
| Forward Transconductance | gFS | VDS=25V,ID=25A | - | 25 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 910 | - | pF |
| Output Capacitance | Coss | - | 100 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 30 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V,RGEN=5Ω | - | 26 | - | nS |
| Turn-on Rise Time | tr | - | 6 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 52 | - | nS | |
| Turn-Off Fall Time | tf | - | 7 | - | nS | |
| Total Gate Charge | Qg | VDS=30V,ID=50A, VGS=10V | - | 31 | - | nC |
| Gate-Source Charge | Qgs | - | 9 | - | nC | |
| Gate-Drain Charge | Qg d | - | 5 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=50A | - | - | 1.2 | V |
2411120955_Minos-IRFZ44N_C7429904.pdf
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