Power Switching MOSFET Minos MPG120N06 60V N Channel with High Current Pulsed and Continuous Ratings
Key Attributes
Model Number:
MPG120N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
2.8V
Reverse Transfer Capacitance (Crss@Vds):
270pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.7nF
Pd - Power Dissipation:
143W
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
MPG120N06
Package:
TO-220
Product Description
MPG120N06 60V N-Channel Power MOSFET
The MPG120N06 is an N-Channel Power MOSFET utilizing advanced trench technology. This design provides excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Key advantages include high ESD capability, a high-density cell design for lower Rdson, and fully characterized avalanche voltage and current for good stability and uniformity. The device also features excellent package thermal dissipation.
Product Attributes
- Brand: MNS-KX (Shenzhen Minos)
- Origin: China
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 120 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 380 | A | |||
| Maximum Power Dissipation (Tc=25) | PD | 143 | W | |||
| Single pulse avalanche energy (Note 2) | EAS | 260 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 175 | ||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 1.05 | /W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 2.8 | 4 | V |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=10V, ID=30A | - | 6.0 | 7.0 | m |
| Forward Transconductance | gFS | VDS=5V,ID=15A | - | 15 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=30V,VGS=0V, f=1.0MHz | - | 3700 | - | pF |
| Output Capacitance | Coss | - | 345 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 270 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=30A, VGS=10V,RGEN=3 | - | 19 | - | nS |
| Turn-on Rise Time | tr | - | 36 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 45 | - | nS | |
| Turn-Off Fall Time | tf | - | 24 | - | nS | |
| Total Gate Charge | Qg | VDS=48V,ID=30A VGS=10V | - | 80 | - | nC |
| Gate-Source Charge | Qgs | - | 25 | - | nC | |
| Gate-Drain Charge | Qgd | - | 22 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=1A | - | - | 1.2 | V |
2410122013_Minos-MPG120N06_C5121608.pdf
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