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quality Nexperia PUMD24 115 resistor equipped dual transistor NPN PNP for compact low current driver circuits factory
quality Nexperia PUMD24 115 resistor equipped dual transistor NPN PNP for compact low current driver circuits factory

Nexperia PUMD24 115 resistor equipped dual transistor NPN PNP for compact low current driver circuits

Key Attributes
Model Number: PUMD24,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
130kΩ
Resistor Ratio:
1.2
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD24,115
Package:
SOT-363
Product Description

Product Overview

The Nexperia PUMD2 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a single SOT363 (SC-88) surface-mounted device (SMD) plastic package. It offers a 100 mA output current capability and incorporates built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. This device is ideal for low current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications.

Product Attributes

  • Brand: Nexperia
  • Package Type: TSSOP6 (SOT363)
  • Configuration: NPN/PNP double transistor
  • Built-in Resistors: R1 = 22 k, R2 = 22 k

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current   - - 100 mA
R1 Bias resistor 1 (input)   15.4 22 28.6 k
R2/R1 Bias resistor ratio   0.8 1 1.2  
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 10 V
VI (TR1 NPN) Input voltage   -10 - 40 V
VI (TR2 PNP) Input voltage   -40 - 10 V
IO Output current   - - 100 mA
Ptot (Tamb ≤ 25 °C) Total power dissipation Device mounted on FR4 PCB - - 300 mW
Tj Junction temperature   - - 150 °C
Tamb Ambient temperature   -55 - 150 °C
Tstg Storage temperature   -65 - 150 °C
Thermal characteristics
Rth(j-a) (per device) Thermal resistance junction to ambient Free air, device mounted on FR4 PCB - - 417 K/W
Characteristics
V(BR)CBO Collector-base breakdown voltage IC = 100 µA; IE = 0 A; Tamb = 25 °C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 °C 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 °C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 °C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 °C - - 5 µA
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 mA; Tamb = 25 °C - - 180 µA
hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 °C 60 - -  
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 µA; Tamb = 25 °C - 1.1 0.8 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 5 mA; Tamb = 25 °C 2.5 1.7 - V
Cc (TR1 NPN) Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - - 2.5 pF
fT (TR1 NPN) Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C - 230 - MHz
Cc (TR2 PNP) Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - - 3 pF
fT (TR2 PNP) Transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C - 180 - MHz

2504101957_Nexperia-PUMD24-115_C553516.pdf

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