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quality Compact SMD PNP Double Resistor Equipped Transistor Nexperia PUMB18 115 with Reduced Component Count factory
quality Compact SMD PNP Double Resistor Equipped Transistor Nexperia PUMB18 115 with Reduced Component Count factory

Compact SMD PNP Double Resistor Equipped Transistor Nexperia PUMB18 115 with Reduced Component Count

Key Attributes
Model Number: PUMB18,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
4.7kΩ
Resistor Ratio:
2.1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMB18,115
Package:
SOT-363
Product Description

Product Overview

The Nexperia PEMB18 and PUMB18 are PNP/PNP double Resistor-Equipped Transistors (RET) designed for Surface-Mounted Device (SMD) applications. These devices offer a reduced component count and simplified circuit design due to their built-in bias resistors, leading to lower pick-and-place costs. They are AEC-Q101 qualified, making them suitable for automotive applications. Typical uses include low-current peripheral driving and controlling IC inputs, replacing general-purpose transistors in digital applications.

Product Attributes

  • Brand: Nexperia (formerly NXP Standard Product business)
  • Product Type: PNP/PNP double Resistor-Equipped Transistors (RET)
  • Certification: AEC-Q101 qualified
  • Package Type: Surface-Mounted Device (SMD) plastic packages

Technical Specifications

Model Package NPN/PNP Complement Package Configuration R1 (k) R2/R1 Ratio Output Current (mA) Collector-Emitter Voltage (V)
PEMB18 SOT666 (ultra small and flat lead) PEMD18 - 4.7 - -100 -50
PUMB18 SOT363 (SC-88, very small) PUMD18 - 4.7 - -100 -50
Parameter Conditions Min Typ Max Unit
R1 bias resistor (input) - 3.3 4.7 6.1 k
R2/R1 bias resistor ratio - 1.7 2.1 2.6 -
Collector-Base Voltage (VCBO) Open emitter - - -50 V
Collector-Emitter Voltage (VCEO) Open base - - -50 V
Emitter-Base Voltage (VEBO) Open collector - - -7 V
Input Voltage (VI) Positive - - +7 V
Input Voltage (VI) Negative - - -20 V
Output Current (IO) - - - -100 mA
Peak Collector Current (ICM) Single pulse; tp 1 ms - - -100 mA
Total Power Dissipation (Ptot) Tamb 25 C (PEMB18 SOT666) - - 200 mW
Total Power Dissipation (Ptot) Tamb 25 C (PUMB18 SOT363) - - 200 mW
Total Power Dissipation (Ptot) Tamb 25 C (Per device PEMB18 SOT666) - - 300 mW
Total Power Dissipation (Ptot) Tamb 25 C (Per device PUMB18 SOT363) - - 300 mW
Junction Temperature (Tj) - - - 150 C
Ambient Temperature (Tamb) - -65 - +150 C
Storage Temperature (Tstg) - -65 - +150 C
Thermal Resistance (Rth(j-a)) Per transistor, free air (PEMB18 SOT666) - - 625 K/W
Thermal Resistance (Rth(j-a)) Per transistor, free air (PUMB18 SOT363) - - 625 K/W
Thermal Resistance (Rth(j-a)) Per device, free air (PEMB18 SOT666) - - 417 K/W
Thermal Resistance (Rth(j-a)) Per device, free air (PUMB18 SOT363) - - 417 K/W
Collector-Base Cut-off Current (ICBO) VCB = -50 V; IE = 0 A - - -100 nA
Collector-Emitter Cut-off Current (ICEO) VCE = -30 V; IB = 0 A - - -1 A
Collector-Emitter Cut-off Current (ICEO) VCE = -30 V; IB = 0 A; Tj = 150 C - - -5 A
Emitter-Base Cut-off Current (IEBO) VEB = -5 V; IC = 0 A - - -600 A
DC Current Gain (hFE) VCE = -5 V; IC = -10 mA 50 - - -
Collector-Emitter Saturation Voltage (VCEsat) IC = -10 mA; IB = -0.5 mA - - -100 mV
Off-state Input Voltage (VI(off)) VCE = -5 V; IC = -100 A - -0.9 -0.3 V
On-state Input Voltage (VI(on)) VCE = -0.3 V; IC = -20 mA -2.5 -1.5 - V
Collector Capacitance (Cc) VCB = -10 V; IE = ie = 0 A; f = 1 MHz - - 3 pF
Transition Frequency (fT) VCE = -5 V; IC = -10 mA; f = 100 MHz - 180 - MHz

2410121745_Nexperia-PUMB18-115_C553494.pdf

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