Low On Resistance N Channel Enhancement Mode MOSFET MIRACLE POWER MSE002L with Halogen Free Technology
Key Attributes
Model Number:
MSE002L
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
130A
RDS(on):
6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Output Capacitance(Coss):
550pF
Pd - Power Dissipation:
240W
Input Capacitance(Ciss):
5.8nF
Gate Charge(Qg):
83nC@10V
Mfr. Part #:
MSE002L
Package:
TOLL-8
Product Description
Product Overview
The MSE002L is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 150V drain-source voltage and 130A continuous drain current, with a low typical on-resistance of 5.0m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for demanding applications. It is halogen-free and RoHS compliant, with 100% EAS guaranteed. Applications include motor driving in power tools, e-vehicles, and robotics, current switching in DC/DC and AC/DC subsystems, and power management in telecom, industrial automation, and consumer electronics.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Miracle Technology
- Compliance: Halogen free; RoHS compliant
- Testing: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 150 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Drain Current-Continuous | TC = 25°C | 130 | A | ||
| ID | Drain Current-Continuous | TC = 100°C | 84 | A | ||
| IDM | Drain Current-Pulsed | 190 | A | |||
| PD | Maximum Power Dissipation | TC = 25°C | 240 | W | ||
| EAS | Single Pulsed Avalanche Energy | 930 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | °C | ||
| Thermal Characteristics | ||||||
| RθJC | Thermal Resistance, Junction to Case | 0.52 | °C/W | |||
| RθJA | Thermal Resistance, Junction to Ambient | 45 | °C/W | |||
| Electrical Characteristics (TJ = 25°C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250µA | 150 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 120V, VGS = 0V | - | - | 1.0 | µA |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = ±20V | - | - | ±100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250µA | 2.0 | - | 4.0 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 20A | - | 5.0 | 6.0 | mΩ |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 75V, VGS = 0V, f = 1.0MHz | - | 5800 | - | pF |
| Coss | Output Capacitance | - | 550 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 17 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 75V, VGS = 10V, RL = 3.75Ω, RGEN = 3Ω | - | 21 | - | ns |
| tr | Turn-On Rise Time | - | 39 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 63 | - | ns | |
| tf | Turn-Off Fall Time | - | 32 | - | ns | |
| Qg | Total Gate Charge | VDS = 75V, VGS = 0 to 10V, ID = 20A | - | 83 | - | nC |
| Qgs | Gate-Source Charge | - | 28 | - | nC | |
| Qgd | Gate-Drain Charge | - | 19.2 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 130 | A |
| ISM | Maximum Pulsed Current | - | - | 190 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 1A | - | - | 1.0 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 15A, dIF/dt = 100A/µs | - | 98 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 15A, dIF/dt = 100A/µs | - | 316 | - | nC |
2504151445_MIRACLE-POWER-MSE002L_C47361213.pdf
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