Surface mounted device Nexperia PDTC123YMB315 NPN resistor equipped transistor with AEC Q101 qualification

Name: Surface mounted device Nexperia PDTC123YMB315 NPN resistor equipped transistor with AEC Q101 qualification
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: PDTC123YMB,315
Availability: InStock

Key Attributes

Model Number: PDTC123YMB,315

Product Custom Attributes

Emitter-Base Voltage VEBO:

Input Resistor:

2.2kΩ

Resistor Ratio:

5.5

Collector - Emitter Voltage VCEO:

50V

Mfr. Part #:

PDTC123YMB,315

Package:

SOT-883-3

Product Description

Product Overview

The PDTC123YMB is an NPN Resistor-Equipped Transistor (RET) designed for low-current peripheral driving and control of IC inputs. This leadless, ultra-small Surface-Mounted Device (SMD) in a DFN1006B-3 (SOT883B) package offers built-in bias resistors, simplifying circuit design and reducing component count and pick-and-place costs. It is AEC-Q101 qualified, making it suitable for automotive applications. The PNP complement is the PDTA123YMB.

Product Attributes

Brand: Nexperia (formerly NXP Standard Product)
Product Type: NPN Resistor-Equipped Transistor (RET)
Package Type: DFN1006B-3 (SOT883B)
Certifications: AEC-Q101 qualified
Built-in Resistors: R1 = 2.2 k, R2 = 10 k

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	Collector-emitter voltage	open base	-	-	50	V
IO	Output current	-	-	-	100	mA
R1	Bias resistor 1 (input)	Tamb = 25 C	1.54	2.2	2.86	k
R2/R1	Bias resistor ratio	-	3.6	4.5	5.5	-
VCBO	Collector-base voltage	open emitter	-	-	50	V
VEBO	Emitter-base voltage	open collector	-	-	5	V
VI	Input voltage	positive	-	-	12	V
VI	Input voltage	negative	-	-	-5	V
ICM	Peak collector current	pulsed; tp 1 ms	-	-	100	mA
Ptot	Total power dissipation	Tamb 25 C [1]	-	-	250	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	150	C
Tstg	Storage temperature	-	-65	-	150	C
Rth(j-a)	Thermal resistance from junction to ambient	in free air [1]	-	-	500	K/W
ICBO	Collector-base cut-off current	VCB = 50 V; IE = 0 A; Tamb = 25 C	-	-	100	nA
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0 A; Tamb = 25 C	-	-	1	A
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0 A; Tj = 150 C	-	-	5	A
IEBO	Emitter-base cut-off current	VEB = 5 V; IC = 0 A; Tamb = 25 C	-	-	700	A
hFE	DC current gain	VCE = 5 V; IC = 5 mA; Tamb = 25 C	35	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = 10 mA; IB = 0.5 mA; Tamb = 25 C	-	-	150	mV
VI(off)	Off-state input voltage	VCE = 5 V; IC = 100 A; Tamb = 25 C	-	0.75	0.3	V
VI(on)	On-state input voltage	VCE = 0.3 V; IC = 20 mA; Tamb = 25 C	2.5	1.15	-	V
CC	Collector capacitance	VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C	-	-	2	pF
fT	Transition frequency	VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [1]	-	230	-	MHz

Note: [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Package Dimensions (SOT883B / DFN1006B-3):

Body: 1.0 x 0.6 x 0.37 mm

Ordering Information:

Type Number: PDTC123YMB
Package Name: DFN1006B-3
Description: Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm
Version: SOT883B

Marking Code: 0011 0110

2410121816_Nexperia-PDTC123YMB-315_C552188.pdf

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