600V 30A Minos F60UP60S3 Ultrafast Soft Recovery Diode Designed for Reduced EMI and Switching Losses
Product Description
FRED Ultrafast Soft Recovery Diode, 600V, 30A2. Optimized for reduced losses and EMI/RFI in high-frequency power conditioning systems. The soft recovery characteristic provides buffering in most applications, making these diodes suitable for power converters and other applications where switching losses are not a significant portion of total losses.
Key Features:
- Ultrafast Recovery
- 175 Operating Junction Temperature
- High Frequency Operation
- Low IR Value
- High Surge Capacity
- Epitaxial Chip Construction
Applications:
- Switched Mode Power Supply
- Inverter Welding
- Uninterruptible Power Supplies (UPS)
Technical Specifications
| Parameter | Symbol | Test Conditions | Values | Units |
|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 600 | V | |
| Continuous Forward Current (Per device) | IF(AV) | TA=110 | 60 | A |
| Continuous Forward Current (Per diode) | IF(AV) | 30 | A | |
| Single Pulse Forward Current | IFSM | TA=25 | 480 | A |
| Maximum Repetitive Forward Current | IFRM | Square wave, 20kHz | 120 | A |
| Operating Junction Temperature | Tj | 175 | ||
| Storage Temperature | Tstg | -55 to +175 | ||
| Breakdown Voltage / Blocking Voltage | VBR | VR=IR=100A | 600 | V |
| Forward Voltage | VF | IF=30 A | 1.0 - 1.6 | V |
| Forward Voltage | VF | IF=30 A, Tj =125 | 1.0 - 1.5 | V |
| Reverse Leakage Current | IR | VR=VRRM | 30 | A |
| Reverse Leakage Current | IR | Tj=150, VR=600V | 30 | A |
| Reverse Recovery Time | trr | IF=0.5A, IR=1A, IRR=0.25A | 55 | ns |
| Reverse Recovery Time | trr | IF=1A,VR=30V, di/dt =200A/us | 28 - 40 | ns |
| Junction-to-Case Thermal Resistance | RthJC | 0.70 | /W |
Package Description (TO-247)
| Item | MIN | MAX | Units |
|---|---|---|---|
| A | 4.90 | 5.16 | mm |
| A1 | 2.27 | 2.53 | mm |
| A2 | 1.85 | 2.11 | mm |
| B | 1.07 | 1.33 | mm |
| B1 | 1.90 | 2.41 | mm |
| B2 | 1.75 | 2.15 | mm |
| B3 | 2.87 | 3.38 | mm |
| B4 | 2.87 | 3.13 | mm |
| C | 0.55 | 0.68 | mm |
| D | 20.82 | 21.10 | mm |
| D1 | 16.25 | 17.65 | mm |
| D2 | 1.05 | 1.35 | mm |
| E | 15.70 | 16.03 | mm |
| E1 | 13.10 | 14.15 | mm |
| E2 | 3.68 | 5.10 | mm |
| E3 | 1.68 | 2.60 | mm |
| e | 5.44 | mm | |
| L | 19.80 | 20.31 | mm |
| L1 | 4.17 | 4.47 | mm |
| P | 3.50 | 3.70 | mm |
| Q | 5.49 | 6.00 | mm |
| S | 6.04 | 6.30 | mm |
Notes:
1. Exceeding the maximum ratings may cause permanent device failure. Design circuits to avoid exceeding absolute maximum ratings.
2. Ensure proper heat sink installation regarding torsional moment and smoothness.
3. MOSFETs are sensitive to static electricity; protect devices from static discharge during use.
4. Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
2506121200_Minos-F60UP60S3_C49108784.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
