Automotive Grade PNP Resistor Equipped Transistor Nexperia PDTA114YM 315 with AEC Q101 Certification
Key Attributes
Model Number:
PDTA114YM,315
Product Custom Attributes
Input Resistor:
10kΩ
Resistor Ratio:
4.7
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTA114YM,315
Package:
SOT-883-3
Product Description
Product Overview
The PDTA114Y series comprises PNP Resistor-Equipped Transistors (RETs) designed for surface-mountable applications. These devices integrate built-in bias resistors, significantly reducing component count and simplifying circuit design. They are suitable for digital applications in automotive and industrial segments, offering a cost-saving alternative to discrete transistors for tasks like controlling IC inputs and switching loads. The series is AEC-Q101 qualified, ensuring suitability for automotive environments.
Product Attributes
- Brand: Nexperia (formerly NXP)
- Type: PNP Resistor-Equipped Transistor (RET)
- Technology: Surface-Mounted Device (SMD)
- Certifications: AEC-Q101 qualified
- Internal Resistors: R1 = 10 k, R2 = 47 k
Technical Specifications
| Type Number | Package | NPN Complement | Package Configuration | Output Current (IO) (Max) | R1 Bias Resistor (Typ) | R2/R1 Bias Resistor Ratio (Typ) | Collector-Emitter Voltage (VCEO) (Open Base) |
|---|---|---|---|---|---|---|---|
| PDTA114YE | SOT416 (SC-75) | PDTC114YE | ultra small | -100 mA | 10 k | 4.7 | -50 V |
| PDTA114YM | SOT883 (SC-101) | PDTC114YM | leadless ultra small | -100 mA | 10 k | 4.7 | -50 V |
| PDTA114YT | SOT23 (TO-236AB) | PDTC114YT | small | -100 mA | 10 k | 4.7 | -50 V |
| PDTA114YU | SOT323 (SC-70) | PDTC114YU | very small | -100 mA | 10 k | 4.7 | -50 V |
Key Characteristics (Tamb = 25 C unless otherwise specified)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | -1 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | -150 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA | 100 | - | - | |
| VCEsat | Collector-emitter saturation voltage | IC = 5 mA; IB = 0.25 mA | - | - | -100 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A | - | -0.7 | -0.5 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 1 mA | -1.4 | -0.8 | - | V |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz | - | 180 | - | MHz |
2410121814_Nexperia-PDTA114YM-315_C552045.pdf
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