Silicon P Channel Power MOSFET Minos MDT15P04D with Low RDS ON and High Current Capability
Key Attributes
Model Number:
MDT15P04D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+175℃
RDS(on):
29mΩ@10V,7.5A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
35pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
930pF@20V
Pd - Power Dissipation:
50W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
MDT15P04D
Package:
TO-252
Product Description
Product Overview
The MDT15P04D is a Silicon P-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key features include a VDS of -40V, continuous ID of -15A, and low RDS(ON) values of < 35m @ VGS=-10V and < 45m @ VGS=-4.5V. Its high-density cell design contributes to lower RDS(ON), and it is fully characterized for avalanche voltage and current with good stability and uniformity.
Product Attributes
- Brand: MNS
- Origin: Shenzhen Minos
- Material: Silicon
- Package: TO-252, SOP-8
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | -15 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | -60 | A | |||
| Maximum Power Dissipation (Tc=25) | PD | 50 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case (TO-252) | RJC | 3.0 | /W | |||
| Thermal Resistance, Junction-to-Ambient (SOP-8) | RJA | 57 | /W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-40V,VGS=0V | -1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250µA | -1.0 | -1.5 | -2.4 | V |
| Drain-Source On-State Resistance (Note 2) | RDS(ON) | VGS=-10V, ID=-7.5A | 29 | 35 | mΩ | |
| Drain-Source On-State Resistance (Note 2) | RDS(ON) | VGS=-4.5V, ID=-5A | 34 | 45 | mΩ | |
| Forward Transconductance | gFS | VDS=-5V,ID=-15A | 10 | S | ||
| Dynamic Characteristics (Note 3) | ||||||
| Input Capacitance | Clss | VDS=-20V,VGS=0V, f=1.0MHz | 930 | pF | ||
| Output Capacitance | Coss | 85 | pF | |||
| Reverse Transfer Capacitance | Crss | 35 | pF | |||
| Switching Characteristics (Note 3) | ||||||
| Turn-on Delay Time | td(on) | VDD=-20V, RL=-1Ω, VGS=-10V,RGEN=3Ω | 8 | ns | ||
| Turn-on Rise Time | tr | 4 | ns | |||
| Turn-Off Delay Time | td(off) | 32 | ns | |||
| Turn-Off Fall Time | tf | 7 | ns | |||
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=-20V,ID=-15A, VGS=-10V | 25 | nC | ||
| Gate-Source Charge | Qgs | 3 | nC | |||
| Gate-Drain Charge | Qg | 7 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=-15A | -1.2 | V | ||
2410122012_Minos-MDT15P04D_C19272218.pdf
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