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quality NPN resistor equipped transistor Nexperia PDTC143ZT235 AEC Q101 qualified for automotive electronics factory
quality NPN resistor equipped transistor Nexperia PDTC143ZT235 AEC Q101 qualified for automotive electronics factory

NPN resistor equipped transistor Nexperia PDTC143ZT235 AEC Q101 qualified for automotive electronics

Key Attributes
Model Number: PDTC143ZT,235
Product Custom Attributes
Input Resistor:
4.7kΩ
Resistor Ratio:
12
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC143ZT,235
Package:
SOT-23
Product Description

Product Overview

The Nexperia PDTC143Z series comprises NPN resistor-equipped transistors (RETs) in surface-mounted device (SMD) plastic packages. These transistors feature built-in bias resistors, reducing component count and simplifying circuit design, leading to lower pick-and-place costs. They are AEC-Q101 qualified and suitable for digital applications in automotive and industrial segments, serving as a cost-saving alternative to BC847/857 series in such applications. Key uses include controlling IC inputs and switching loads, with an output current capability of 100 mA.

Product Attributes

  • Brand: Nexperia
  • Type: NPN Resistor-Equipped Transistor (RET)
  • Qualification: AEC-Q101 qualified
  • Resistor Values: R1 = 4.7 k, R2 = 47 k

Technical Specifications

Model Package Description VCEO (Max) IO (Max) R1 (Typ) R2/R1 Ratio (Typ)
PDTC143ZE SOT416 (SC-75) Ultra small 50 V 100 mA 4.7 k 10
PDTC143ZM SOT883 (SC-101) Leadless ultra small 50 V 100 mA 4.7 k 10
PDTC143ZT SOT23 (TO-236AB) Small 50 V 100 mA 4.7 k 10
PDTC143ZU SOT323 (SC-70) Very small 50 V 100 mA 4.7 k 10
Parameter Conditions Min Typ Max Unit
Collector-emitter voltage (VCEO) Open base - - 50 V
Output current (IO) - - - 100 mA
Bias resistor R1 (input) - 3.3 4.7 6.1 k
Bias resistor ratio R2/R1 - 8 10 12 -
Collector-base voltage (VCBO) Open emitter - - 50 V
Emitter-base voltage (VEBO) Open collector - - 5 V
Input voltage (VI) Positive - - 30 V
Input voltage (VI) Negative -5 - - V
Peak collector current (ICM) Single pulse; tp 1 ms - - 100 mA
Junction temperature (Tj) - - - 150 C
Ambient temperature (Tamb) - -65 - 150 C
Storage temperature (Tstg) - -65 - 150 C
Model Total Power Dissipation (Ptot) at Tamb 25 C Thermal Resistance (Rth(j-a))
PDTC143ZE (SOT416) 150 mW 830 K/W
PDTC143ZM (SOT883) 250 mW 500 K/W
PDTC143ZT (SOT23) 250 mW 500 K/W
PDTC143ZU (SOT323) 200 mW 625 K/W
Parameter Conditions Min Typ Max Unit
Collector-base cut-off current (ICBO) VCB = 50 V; IE = 0 A - - 100 nA
Collector-emitter cut-off current (ICEO) VCE = 30 V; IB = 0 A - - 1 A
Collector-emitter cut-off current (ICEO) VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
Emitter-base cut-off current (IEBO) VEB = 5 V; IC = 0 A - - 170 A
DC current gain (hFE) VCE = 5 V; IC = 10 mA 100 - - -
Collector-emitter saturation voltage (VCEsat) IC = 5 mA; IB = 0.25 mA - - 100 mV
Off-state input voltage (VI(off)) VCE = 5 V; IC = 100 A - 0.6 0.5 V
On-state input voltage (VI(on)) VCE = 0.3 V; IC = 5 mA 1.3 0.9 - V
Collector capacitance (Cc) VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2.5 pF
Transition frequency (fT) VCE = 5 V; IC = 10 mA; f = 100 MHz - 230 - MHz

2410121805_Nexperia-PDTC143ZT-235_C503455.pdf

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