Power Switching Silicon N Channel MOSFET Minos MD200N08 Featuring Low RDS ON and High Avalanche Energy
Key Attributes
Model Number:
MD200N08
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
3.5mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
810pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
13.2nF@25V
Pd - Power Dissipation:
270W
Gate Charge(Qg):
257nC@10V
Mfr. Part #:
MD200N08
Package:
TO-247
Product Description
Product Overview
The MD200N08 is a Silicon N-Channel Power MOSFET featuring advanced technology and design for excellent RDS(ON). It is suitable for a wide variety of applications, including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Key advantages include high density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation.
Product Attributes
- Brand: MNS
- Origin: Shenzhen Minos Technology Co., Ltd.
- Material: Silicon N-Channel
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| General Features | ||||||
| Drain-Source Voltage | VDS | 80 | V | |||
| Drain Current-Continuous | ID | 200 | A | |||
| RDS(ON) | RDS(ON) | VGS=10V | 3.5 | 4 | m | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | @ Ta=25 | 80 | V | ||
| Gate-Source Voltage | VGS | @ Ta=25 | 20 | V | ||
| Drain Current-Continuous | ID | @ Ta=25 | 200 | A | ||
| Drain Current-Pulsed | IDM | @ Ta=25 (Note 1) | 800 | A | ||
| Maximum Power Dissipation | PD | Tc=25 | 270 | W | ||
| Single pulse avalanche energy | EAS | @ Ta=25 (Note 2) | 1600 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 0.41 | /W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 80 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=80V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=50A (Note 3) | - | 3.5 | 4 | m |
| Forward Transconductance | gFS | VDS=5V,ID=15A | - | 17 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 13200 | - | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V, f=1.0MHz | - | 950 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, f=1.0MHz | - | 810 | - | pF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=40V, ID=40A, VGS=10V,RGEN=3 (Note 4) | - | 26 | - | nS |
| Turn-on Rise Time | tr | VDD=40V, ID=40A, VGS=10V,RGEN=3 (Note 4) | - | 20 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=40V, ID=40A, VGS=10V,RGEN=3 (Note 4) | - | 50 | - | nS |
| Turn-Off Fall Time | tf | VDD=40V, ID=40A, VGS=10V,RGEN=3 (Note 4) | - | 18 | - | nS |
| Total Gate Charge | Qg | VDS=64V,ID=80A, VGS=10V | - | 257 | - | nC |
| Gate-Source Charge | Qgs | VDS=64V,ID=80A, VGS=10V | - | 76 | - | nC |
| Gate-Drain Charge | Qg d | VDS=64V,ID=80A, VGS=10V | - | 80 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=80A | - | - | 1.2 | V |
2410122013_Minos-MD200N08_C7429908.pdf
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