High Voltage Power Transistor Minos MD24N50 with Enhanced Avalanche Energy and Low Conduction Losses
Key Attributes
Model Number:
MD24N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
24A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
180mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
25pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.5nF@25V
Pd - Power Dissipation:
320W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
MD24N50
Package:
TO-3PN
Product Description
Product Overview
The MD24N50 is a silicon N-Channel Enhanced Power MOSFET designed for high-performance applications. Leveraging advanced MOSFET technology, it offers reduced conduction losses, improved switching performance, and enhanced avalanche energy. This transistor is an ideal choice for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Material: Silicon N-Channel
- Certifications: RoHS product
Technical Specifications
| Parameter | Rating | Units | Notes |
| VDS (Drain-to-Source Voltage) | 500 | V | |
| RDS(ON) (Drain-to-Source On-Resistance) | <230 | m | @VGS=10V, ID=24A (Typ:180m) |
| ID (Continuous Drain Current) | 24 | A | @ Ta=25 |
| ID (Continuous Drain Current) | 15.8 | A | @ TC = 100 C |
| IDM (Pulsed Drain Current) | 100 | A | Note1 |
| VGS (Gate-to-Source Voltage) | 30 | V | |
| EAS (Single Pulse Avalanche Energy) | 1500 | mJ | Note2 |
| dv/dt (Peak Diode Recovery dv/dt) | 5.0 | V/ns | Note3 |
| PD (Power Dissipation - TO-3PN) | 320 | W | @ Ta=25 |
| PD (Power Dissipation - TO-3PF) | 62.5 | W | @ Ta=25 |
| TJ, Tstg (Operating Junction and Storage Temperature Range) | -55 to 150 | ||
| TL (Maximum Temperature for Soldering) | 300 | ||
| RJC (Junction-to-Case - TO-3PN) | 0.39 | /W | |
| RJA (Junction-to-Ambient - TO-3PN) | 62.5 | /W | |
| RJC (Junction-to-Case - TO-3PF) | 2.0 | /W | |
| RJA (Junction-to-Ambient - TO-3PF) | 62.5 | /W | |
| BVDSS (Drain to Source Breakdown Voltage) | 500 | V | VGS=0V, ID=250A |
| IDSS (Drain to Source Leakage Current) | <10 | A | VDS=500V, VGS= 0V, Tj = 25 |
| IDSS (Drain to Source Leakage Current) | <100 | A | VDS=400V, VGS= 0V, Tj = 125 |
| IGSS(F) (Gate to Source Forward Leakage) | <100 | nA | VGS=+30V |
| IGSS(R) (Gate to Source Reverse Leakage) | >-100 | nA | VGS=-30V |
| RDS(ON) (Drain-to-Source On-Resistance) | 0.18 - 0.28 | VGS=10V, ID=10A (Note4) | |
| VGS(TH) (Gate Threshold Voltage) | 2.0 - 4.0 | V | VDS = VGS, ID = 250A (Note4) |
| gfs (Forward Transconductance) | 12 | S | VDS=20V, ID =10A (Note4) |
| Rg (Gate Resistance) | 1.3 | f = 1.0MHz | |
| Ciss (Input Capacitance) | 3500 | PF | VGS = 0V, VDS= 25V, f = 1.0MHz |
| Coss (Output Capacitance) | 350 | PF | |
| Crss (Reverse Transfer Capacitance) | 25 | PF | |
| td(ON) (Turn-on Delay Time) | 38 | ns | ID =24A, VDD= 250V, VGS= 10V, RG =20 |
| tr (Rise Time) | 75 | ns | |
| td(OFF) (Turn-Off Delay Time) | 99 | ns | |
| tf (Fall Time) | 83 | ns | |
| Qg (Total Gate Charge) | 72 | nC | ID =24A, VDD=400V, VGS = 10V |
| Qgs (Gate to Source Charge) | 17 | nC | |
| Qgd (Gate to Drain Miller)Charge | 25 | nC | |
| IS (Continuous Source Current - Body Diode) | 24 | A | TC=25 C |
| ISM (Maximum Pulsed Current - Body Diode) | 100 | A | |
| VSD (Diode Forward Voltage) | 1.0 | V | IS=24A, VGS=0V(Note4) |
| Trr (Reverse Recovery Time) | 551 | ns | IS=24A, Tj = 25C, dIF/dt=100A/us, VGS=0V |
| Qrr (Reverse Recovery Charge) | 7025 | nC | |
| Irrm (Reverse Recovery Current) | 25.5 | A |
2410122024_Minos-MD24N50_C6719387.pdf
Related Products
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
