N Channel Enhancement Mode MOSFET MIRACLE POWER MSE003L with High Current Rating and Low Gate Charge
Key Attributes
Model Number:
MSE003L
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
263A
RDS(on):
3.9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF
Output Capacitance(Coss):
722pF
Input Capacitance(Ciss):
8.622nF
Pd - Power Dissipation:
625W
Gate Charge(Qg):
125nC@10V
Mfr. Part #:
MSE003L
Package:
TOLL-8L
Product Description
Product Overview
The MSE003L is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 150V drain-source voltage and a continuous drain current of 263A at 25C, with a low on-resistance of 3.3m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, utilizing advanced trench technology and guaranteed 100% EAS. It is suitable for motor driving in power tools, e-vehicles, and robotics, current switching in DC/DC & AC/DC (SR) subsystems, and power management in telecom, industrial automation, and CE applications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Advanced Trench Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 150 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous (TC = 25C) | 263 | A | |||
| ID | Drain Current-Continuous (TC = 100C) | 166 | A | |||
| IDM | Drain Current-Pulsed | 1052 | A | |||
| PD | Maximum Power Dissipation (TC = 25C) | 625 | W | |||
| EAS | Single Pulsed Avalanche Energy | 1106 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.2 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 42 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 150 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 150V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.0 | - | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A | - | 3.3 | 3.9 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | 4.1 | - | |
| Ciss | Input Capacitance | VDS = 75V, VGS = 0V, f = 1.0MHz | - | 8622 | - | pF |
| Coss | Output Capacitance | - | 722 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 26 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 75V, VGS = 10V, RL = 3.75 RGEN = 3.0 | - | 32 | - | ns |
| tr | Turn-On Rise Time | - | 60 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 87 | - | ns | |
| tf | Turn-Off Fall Time | - | 48 | - | ns | |
| Qg | Total Gate Charge | VDS = 75V, VGS = 0 to 10V, ID = 20A | - | 125 | - | nC |
| Qgs | Gate-Source Charge | - | 46 | - | nC | |
| Qgd | Gate-Drain Charge | - | 32 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 263 | A |
| ISM | Maximum Pulsed Current | - | - | 1052 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 30A | - | 0.7 | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 15A, dIF/dt = 100A/s | - | 111 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 15A, dIF/dt = 100A/s | - | 428 | - | nC |
Package Information
Package Type: TOLL-8L
| Symbol | Min. | Typ. | Max. | Symbol | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|
| A | 2.25 | 2.30 | 2.35 | E | 9.85 | 9.90 | 9.95 |
| A1 | 1.75 | 1.80 | 1.85 | E1 | 8.00 | 8.10 | 8.20 |
| b | 0.65 | 0.70 | 0.75 | E2 | 0.65 | 0.70 | 0.75 |
| b1 | 9.75 | 9.80 | 9.85 | H | 11.60 | 11.70 | 11.80 |
| b2 | 0.70 | 0.75 | 0.80 | H1 | 6.95 | BSC | |
| b3 | 1.15 | 1.20 | 1.25 | H2 | 5.90 | BSC | |
| c | 0.45 | 0.50 | 0.55 | K | 3.10 | REF | |
| D | 10.35 | 10.40 | 10.45 | L | 1.55 | 1.65 | 1.75 |
| D1 | 11.00 | 11.10 | 11.20 | L1 | 0.65 | 0.70 | 0.75 |
| D2 | 3.25 | 3.30 | 3.35 | L2 | 0.50 | 0.60 | 0.70 |
| D4 | 4.50 | 4.55 | 4.60 | L3 | 0.40 | 0.50 | 0.60 |
| e | 1.20 | BSC | Q | 7.95 | REF | ||
| e1 | 1.225 | BSC | R | 3.00 | 3.10 | 3.20 |
2504151445_MIRACLE-POWER-MSE003L_C47361214.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
