Nexperia PEMH9 115 AEC Q101 qualified resistor equipped transistors RET for automotive and digital applications
Key Attributes
Model Number:
PEMH9,115
Product Custom Attributes
Input Resistor:
13kΩ
Resistor Ratio:
4.7
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PEMH9,115
Package:
SOT-666
Product Description
Nexperia PEMH9; PIMH9; PUMH9 NPN/NPN Resistor-Equipped Transistors (RET)
Nexperia's PEMH9, PIMH9, and PUMH9 series are NPN/NPN double Resistor-Equipped Transistors (RET) designed for surface-mounted applications. These devices integrate built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. They are AEC-Q101 qualified, making them suitable for demanding applications.
Product Overview
These NPN/NPN double Resistor-Equipped Transistors (RET) offer a 100 mA output current capability and feature integrated bias resistors (R1 = 10 k, R2 = 47 k). Their design simplifies circuit construction and reduces the number of components required. They are ideal for low current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications. The series is AEC-Q101 qualified, ensuring suitability for automotive applications.
Product Attributes
- Brand: Nexperia
- Type: NPN/NPN double Resistor-Equipped Transistors (RET)
- Certification: AEC-Q101 qualified
- Package Type: Surface-Mounted Device (SMD)
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor | ||||||
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | - | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | - | 3.7 | 4.7 | 5.7 | - |
| VCBO | Collector-base voltage | open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 6 | V |
| VI | Input voltage | positive | - | - | +40 | V |
| VI | Input voltage | negative | - | - | -6 | V |
| ICM | Peak collector current | single pulse; tp 1 ms | - | - | 100 | mA |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -55 | - | +150 | C |
| Tstg | Storage temperature | - | -65 | - | +150 | C |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 150 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA | 100 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 5 mA; IB = 0.25 mA | - | - | 100 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A | - | 0.7 | 0.5 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 1 mA | 1.4 | 0.8 | - | V |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz | - | 230 | - | MHz |
| Package specific power dissipation (Tamb 25 C) | ||||||
| Ptot | Total power dissipation | PEMH9 (SOT666) | - | - | 200 | mW |
| Ptot | Total power dissipation | PIMH9 (SOT457) | - | - | 250 | mW |
| Ptot | Total power dissipation | PUMH9 (SOT363) | - | - | 200 | mW |
| Per device total power dissipation (Tamb 25 C) | ||||||
| Ptot | Total power dissipation | PEMH9 (SOT666) | - | - | 300 | mW |
| Ptot | Total power dissipation | PIMH9 (SOT457) | - | - | 400 | mW |
| Ptot | Total power dissipation | PUMH9 (SOT363) | - | - | 300 | mW |
| Models and Packages | ||||||
| Type number | Package Name | Package Configuration | ||||
| PEMH9 | SOT666 | ultra small and flat lead | ||||
| PIMH9 | SOT457 (SC-74) | small | ||||
| PUMH9 | SOT363 (SC-88) | very small | ||||
Applications
- Low current peripheral driver
- Control of IC inputs
- Replaces general-purpose transistors in digital applications
2411121027_Nexperia-PEMH9-115_C194489.pdf
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