High Current 80V N Channel Power MOSFET Minos MPG200N08 with Low On Resistance and Thermal Stability

Key Attributes
Model Number: MPG200N08
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
200A
RDS(on):
4mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
810pF
Number:
1 N-channel
Input Capacitance(Ciss):
13.2nF
Pd - Power Dissipation:
270W
Gate Charge(Qg):
257nC
Mfr. Part #:
MPG200N08
Package:
TO-220
Product Description

Product Overview

The MPG200N08 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high-density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for efficient heat dissipation.

Product Attributes

  • Brand: MNS
  • Origin: Shenzhen, China

Technical Specifications

Ordering CodePackageVDS (V)ID (A)RDS(ON) (m) @ VGS=10VEAS (mJ)PD (W)TJ,TSTG (C)
MPG200N08-PTO-22080200< 41600270-55 To 175
MPG200N08-STO-26380200< 41600270-55 To 175
ParameterConditionMinTypMaxUnit
BVDSSVGS=0V, ID=250A80--V
IDSSVDS=80V,VGS=0V--1A
IGSSVGS=20V,VDS=0V--100nA
VGS(th)VDS=VGS,ID=250A234V
RDS(ON)VGS=10V, ID=50A-3.54m
gFSVDS=5V,ID=15A-17-S
ClssVDS=25V,VGS=0V, f=1.0MHz-13200-pF
Coss--950-pF
Crss--810-pF
td(on)VDD=40V, ID=40A, VGS=10V,RGEN=3-26-nS
tr--20-nS
td(off)--50-nS
tf-18--nS
QgVDS=64V,ID=80A, VGS=10V-257-nC
Qgs--76-nC
Qgd--80-nC
VSDVGS=0V,IS=80A--1.2V

2410122012_Minos-MPG200N08_C2980292.pdf

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