N Channel MOSFET Minos MPF8N65 Offering 650V VDS and 8A Continuous Drain Current for Power Applications
Key Attributes
Model Number:
MPF8N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
8A
RDS(on):
1.4Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.6pF
Number:
1 N-channel
Input Capacitance(Ciss):
870pF@25V
Pd - Power Dissipation:
35W
Gate Charge(Qg):
22nC@520V
Mfr. Part #:
MPF8N65
Package:
TO-220F
Product Description
Product Overview
This N-Channel MOSFET is designed for high-voltage applications, offering a VDS of 650V and a continuous drain current of 8A. It features fast switching speeds, 100% avalanche testing, and improved dv/dt capability, making it suitable for demanding power supply applications. The device is RoHS and Halogen-Free compliant.
Product Attributes
- Brand: MNS
- Origin: Shenzhen Minos (China)
- Certifications: RoHS, Halogen-Free
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | TC=25unless otherwise specified | - | - | 650 | V |
| VGSS | Gate-Source Voltage | TC=25unless otherwise specified | - | - | 30 | V |
| ID | Continuous Drain Current | TC = 25, note5 | - | - | 8 | A |
| IDM | Pulsed Drain Current | note3 | - | - | 32 | A |
| PD | Power Dissipation | TC= 25, note2 | - | - | 35 | W |
| EAS | Single Pulse Avalanche Energy | note3,6 | - | - | 281 | mJ |
| RJC | Thermal Resistance, Junction to Case | - | - | - | 3.6 | /W |
| RJA | Thermal Resistance, Junction to Ambient | note1,4 | - | - | 62.5 | /W |
| TJ, TSTG | Operating and Storage Temperature Range | - | -55 | - | +150 | |
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS | Drain-Source Leakage Current | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS | Gate to Body Leakage Current | VDS= 0V, VGS = 30V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2 | - | 4 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID= 4A | - | 1.17 | 1.4 | |
| Ciss | Input Capacitance | VDS= 25V, VGS= 0V, f = 1.0MHz | - | 870 | - | pF |
| Coss | Output Capacitance | - | - | 97 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 9.6 | - | pF |
| Qg | Total Gate Charge | VDS= 520V, ID = 8A, VGS= 10V | - | 22 | - | nC |
| Qgs | Gate-Source Charge | - | - | 5 | - | - |
| Qgd | Gate-Drain(Miller) Charge | - | - | 5.5 | - | - |
| td(on) | Turn-On Delay Time | VDS= 100V, ID= 8A, RG= 25, VGS=10V | - | 12 | - | ns |
| tr | Turn-On Rise Time | - | - | 20 | - | - |
| td(off) | Turn-Off Delay Time | - | - | 74 | - | - |
| tf | Turn-Off Fall Time | - | - | 33 | - | - |
| VDS | Diode Forward Voltage | IS=8A . VGS= 0V, note3 | - | - | 1.4 | V |
| trr | Reverse Recovery Time | ISD=8A, VGS = 0V dlSD/dt=100A/s, note3 | - | 506 | - | ns |
| Qrr | Reverse Recovery Charge | - | - | 2.7 | - | nC |
2411220032_Minos-MPF8N65_C2980285.pdf
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