High voltage power MOSFET Minos MPF9N90 with low gate to source voltage and avalanche energy testing
Key Attributes
Model Number:
MPF9N90
Product Custom Attributes
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
9A
RDS(on):
970mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.51nF
Pd - Power Dissipation:
50W
Output Capacitance(Coss):
195pF
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
MPF9N90
Package:
TO-220F
Product Description
Product Overview
The MPF9N90 is a high-performance N-Channel Power MOSFET utilizing advanced technology to achieve excellent RDS(ON) and a wide range of applications. Key features include a high VDS of 900V, low ON resistance, low reverse transfer capacitances, and 100% single pulse avalanche energy testing. It is suitable for power switching applications, adapters, and chargers.
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen Minos Technology Co., Ltd.
Technical Specifications
| Parameter | Rating | Units | Test Conditions |
| General Features | |||
| VDS | 900 | V | |
| RDS(ON) | <1.15 | m | VGS=10V, ID=9A (Typ:0.97) |
| Avalanche Energy | 100% Single Pulse Tested | ||
| Absolute Maximum Ratings | |||
| Continuous Drain Current (ID) | 9 | A | TC = 25C |
| Continuous Drain Current (ID) | 5.6 | A | TC = 100 C |
| Pulsed Drain Current (IDM) | 36 | A | (Note1) |
| Gate-to-Source Voltage (VGS) | 30 | V | |
| Single Pulse Avalanche Energy (EAS) | 1000 | mJ | (Note2) |
| Peak Diode Recovery dv/dt | 4.0 | V/ns | (Note3) |
| Power Dissipation (PD) | 50 | W | TO-220F |
| Operating Junction and Storage Temperature Range (TJ, Tstg) | 55 to 150 | ||
| Maximum Temperature for Soldering (TL) | 300 | ||
| Thermal Characteristics | |||
| Junction-to-Case (RJC) | 2.5 | /W | |
| Junction-to-Ambient (RJA) | 62.5 | /W | |
| Electrical Characteristics | |||
| Drain to Source Breakdown Voltage (VDSS) | 900 | V | VGS=0V, ID=250A |
| Drain to Source Leakage Current (IDSS) | 1 | A | VDS=900V, VGS= 0V, Tj = 25 |
| Drain to Source Leakage Current (IDSS) | 10 | A | VDS=720V, VGS= 0V, Tj = 125 |
| Gate to Source Forward Leakage (IGSS(F)) | 100 | nA | VGS=+30V |
| Gate to Source Reverse Leakage (IGSS(R)) | -100 | nA | VGS=-30V |
| Drain-to-Source On- Resistance (RDS(ON)) | 0.97 | VGS=10V, ID=4.5A (Note4) | |
| Drain-to-Source On- Resistance (RDS(ON)) | 1.15 | VGS=10V, ID=4.5A (Note4) | |
| Gate Threshold Voltage (VGS(TH)) | 3.0 | V | VDS = VGS, ID = 250A (Note4) |
| Gate Threshold Voltage (VGS(TH)) | 5.0 | V | VDS = VGS, ID = 250A (Note4) |
| Dynamic Characteristics | |||
| Gate resistance (Rg) | 0.9 | f = 1.0MHz | |
| Input Capacitance (Ciss) | 2510 | PF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| Output Capacitance (Coss) | 195 | PF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| Reverse Transfer Capacitance (Crss) | 10 | PF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| Switching Characteristics | |||
| Turn-on Delay Time (td(ON)) | 55 | ns | ID =9A, VDD = 450V, VGS = 10V, RG =20 |
| Rise Time (tr) | 103 | ns | ID =9A, VDD = 450V, VGS = 10V, RG =20 |
| Turn-Off Delay Time (td(OFF)) | 110 | ns | ID =9A, VDD = 450V, VGS = 10V, RG =20 |
| Fall Time (tf) | 73 | ns | ID =9A, VDD = 450V, VGS = 10V, RG =20 |
| Total Gate Charge (Qg) | 52 | nC | ID =9A, VDD=720V, VGS= 10V |
| Gate to Source Charge (Qgs) | 13 | nC | ID =9A, VDD=720V, VGS= 10V |
| Gate to Drain (Miller)Charge (Qgd) | 15 | nC | ID =9A, VDD=720V, VGS= 10V |
| Source-Drain Diode Characteristics | |||
| Continuous Source Current (IS) | 9 | A | TC=25 C |
| Maximum Pulsed Current (ISM) | 36 | A | |
| Diode Forward Voltage (VSD) | 1.2 | V | IS=9A, VGS=0V (Note4) |
| Reverse Recovery Time (Trr) | 610 | ns | IS=9A, Tj = 25C, dIF/dt=100A/us, VGS=0V |
| Reverse Recovery Charge (Qrr) | 5500 | nC | IS=9A, Tj = 25C, dIF/dt=100A/us, VGS=0V |
2506121200_Minos-MPF9N90_C49108792.pdf
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