power switching solution featuring Minos MPG60N10P N channel MOSFET with low RDS ON and high avalanche energy
Key Attributes
Model Number:
MPG60N10P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
14.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
183pF
Number:
1 N-channel
Output Capacitance(Coss):
225pF
Input Capacitance(Ciss):
3.72nF
Pd - Power Dissipation:
160W
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
MPG60N10P
Package:
TO-220
Product Description
Product Overview
The MPG60N10P is a high-performance N-channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, a high-density cell design for lower Rds(on), and fully characterized avalanche voltage and current for enhanced reliability and stability.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Certifications: 100% UIS TESTED, 100% DVDS TESTED
Technical Specifications
| Device Marking | Ordering Codes | Package | Product Code | VDS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | EAS (mJ) | RJC (/W) |
| M60N10 | MPG60N10-P | TO-220 | MPG60N10P | 100 | 60 | <16.5 | 250 | 0.93 |
| M60N10 | MDT60N10-D | TO-252-2L | MDT60N10 | 100 | 60 | <16.5 | 250 | (Not Specified) |
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=30A | - | 14.5 | 16.5 | m |
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 3720 | - | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V, f=1.0MHz | - | 225 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, f=1.0MHz | - | 183 | - | pF |
| Turn-on Delay Time | td(on) | VDD=50V, ID=30A, VGS=10V,RGEN=3 | - | 12 | - | nS |
| Turn-on Rise Time | tr | VDD=50V, ID=30A, VGS=10V,RGEN=3 | - | 9 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=50V, ID=30A, VGS=10V,RGEN=3 | - | 20 | - | nS |
| Turn-Off Fall Time | tf | VDD=50V, ID=30A, VGS=10V,RGEN=3 | - | 18 | - | nS |
| Total Gate Charge | Qg | VDS=80V, ID=30A, VGS=10V | - | 80 | - | nC |
| Gate-Source Charge | Qgs | VDS=80V, ID=30A, VGS=10V | - | 23 | - | nC |
| Gate-Drain Charge | Qg d | VDS=80V, ID=30A, VGS=10V | - | 26 | - | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=60A | - | - | 1.2 | V |
2411120955_Minos-MPG60N10P_C5452756.pdf
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