Power MOSFET MIRACLE POWER MJD11N65 designed for in lighting telecom and server power applications
Key Attributes
Model Number:
MJD11N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
350mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.3pF
Number:
1 N-channel
Output Capacitance(Coss):
59pF
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
901pF
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
MJD11N65
Package:
TO-252
Product Description
Product Overview
MJD11N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for efficient power management. It offers a 650V breakdown voltage and a low on-resistance of 0.32 (typ.) at 10V VGS, making it easy to control gate switching. This enhancement mode MOSFET is suitable for various power applications including resonant and hard switching PWM, PFC stages, PC power supplies, adaptors, LCD & PDP TVs, lighting, server power, telecom power, and UPS systems.Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Advanced Super Junction Technology
- Mode: Enhancement Mode
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | 650V, 11A, | 0.32@VGS = 10V | ||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.8 | 4.2 | V | |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | 650 | V | ||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous | TC =25C | 11 | A | ||
| IDM | Drain Current-Pulsed | b | 33 | A | ||
| PD | Maximum Power Dissipation | @ TJ =25C | 83 | W | ||
| dv/dt | Peak Diode Recovery dv/dt | c | 15 | V/ns | ||
| EAS | Single Pulsed Avalanche Energy | d | 624 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 1.5 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 5.5A | - | 0.32 | 0.35 | |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | - | 11 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10kHz | - | 901 | - | pF |
| Coss | Output Capacitance | - | 59 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 5.3 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, ID =4.8A, VGS=13V, RG=3.4 | - | 7.2 | - | ns |
| tr | Turn-On Rise Time | - | 20.8 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 29.2 | - | ns | |
| tf | Turn-Off Fall Time | - | 19.2 | - | ns | |
| Qg | Total Gate Charge | VDS = 400V, ID =4.8A, VGS = 0 to10V | - | 22 | - | nC |
| Qgs | Gate-Source Charge | - | 5.8 | - | nC | |
| Qgd | Gate-Drain Charge | - | 17 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | - | 0.74 | - | V |
| Trr | Body Diode Reverse Recovery Time | IF=4.8A,VR = 400V dIF/dt=100A/us | - | 250 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF=4.8A,VR = 400V dIF/dt=100A/us | - | 2.57 | - | C |
| Irrm | Peak reverse recovery current | IF=4.8A,VR = 400V dIF/dt=100A/us | - | 19.6 | - | A |
2408011701_MIRACLE-POWER-MJD11N65_C34373726.pdf
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