80V N Channel Power MOSFET Minos MPG100N08 Offering Low Gate Charge and Low On Resistance for Power Management
Key Attributes
Model Number:
MPG100N08
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.6mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)):
3.6V
Reverse Transfer Capacitance (Crss@Vds):
165pF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
6.533nF@40V
Pd - Power Dissipation:
117W
Gate Charge(Qg):
119nC@10V
Mfr. Part #:
MPG100N08
Package:
TO-220
Product Description
Product Description
The MPG100N08 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. This design provides excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including motor control and drive, battery management, and Uninterruptible Power Supplies (UPS). Key features include extremely low on-resistance, an excellent Qg x RDS(on) product (FOM), and qualification according to JEDEC criteria. The device is 100% DVDS and Avalanche Tested.
Product Attributes
- Brand: MNS-KX (Shenzhen Minos)
- Origin: China (Shenzhen)
- Certifications: JEDEC criteria
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-to-Source Voltage | 80 | V | |||
| ID | Continuous Drain Current | TC=25 | 100 | A | ||
| ID | Continuous Drain Current | TC=100 | 56 | A | ||
| ID pulse | Pulsed Drain Current | (TC=25tp limited by Tjmax) | 352 | A | ||
| EAS | Single Pulse Avalanche Energy | (RG=25, L=0.5mH) | 169 | mJ | ||
| VGS | Gate-Source Voltage | 25 | V | |||
| Ptot | Power Dissipation | (TC=25) | 117 | W | ||
| Tj & Tstg | Operating junction and Storage Temperature | -55 | 150 | |||
| Thermal Characteristics | ||||||
| RthJC | Thermal Resistance, Junction-to-Case | - | - | 1.07 | /W | |
| RthJA | Thermal Resistance, Junction-to-Ambient(min. footprint) | - | - | 80 | /W | |
| Static Characteristics | ||||||
| BVDSS | Drain-to-Source Breakdown Voltage | VGS = 0V, ID = 250A | 80 | - | - | V |
| VGS(th) | Gate threshold voltage | VDS = VGS, ID = 250A | 2.4 | 3 | 3.6 | V |
| IDSS | Zero gate voltage drain current | VDS = 80V, VGS = 0V, Tj = 25 | - | 0.05 | 1 | A |
| IDSS | Zero gate voltage drain current | VDS = 80V, VGS = 0V, Tj= 125 | - | - | 5 | A |
| IGSS | Gate-to-Source Leakage Current | VGS = 25V, VDS = 0V | - | 10 | 100 | nA |
| RDS(on) | Drain-source on-state resistance | VGS = 10V, ID = 40A, Tj = 25C | - | 5.8 | 8.6 | m |
| RDS(on) | Drain-source on-state resistance | VGS = 10V, ID = 40A, Tj= 150C | - | - | 15 | m |
| gfs | Transconductance | VDS = 5V,ID = 40A | - | 41 | - | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS = 0V, VDS = 40V, f = 1.0MHz | - | 6533 | - | pF |
| Coss | Output Capacitance | VGS = 0V, VDS = 40V, f = 1.0MHz | - | 338 | - | pF |
| Crss | Reverse Transfer Capacitance | VGS = 0V, VDS = 40V, f = 1.0MHz | - | 165 | - | pF |
| Qg | Gate Total Charge | VGS = 10V, VDS = 40V, ID= 40A, f = 1.0MHz | - | 119 | - | nC |
| Qgs | Gate -Source Charge | VGS = 10V, VDS = 40V, ID= 40A, f = 1.0MHz | - | 42 | - | nC |
| Qgd | Gate Drain Charge | VGS = 10V, VDS = 40V, ID= 40A, f = 1.0MHz | - | 33 | - | nC |
| td(on) | Turn-on Delay Time | VDD = 40V, VGS = 10V, RG = 2.7 | - | 23 | - | ns |
| tr | Rise Time | VDD = 40V, VGS = 10V, RG = 2.7 | - | 84 | - | ns |
| td(off) | Turn-off Delay Time | VDD = 40V, VGS = 10V, RG = 2.7 | - | 48 | - | ns |
| tf | Fall Time | VDD = 40V, VGS = 10V, RG = 2.7 | - | 64 | - | ns |
| RG | Gate resistance | VGS = 0V, VDS = 0V, f = 1.0MHz | - | 0.8 | - | |
| VSD | Body Diode Forward Voltage | ISD= 40A, VGS = 0V | - | 0.9 | 1.4 | V |
| trr | Body Diode Reverse Recovery Time | If = 40A, di/dt = 100A/s | - | 38 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | If = 40A, di/dt = 100A/s | - | 63 | - | nC |
2410010301_Minos-MPG100N08_C5352774.pdf
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