Durable N-Channel MOSFET MIRACLE POWER MS6001Y with 111A Continuous Current and Fast Switching Speed
Key Attributes
Model Number:
MS6001Y
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
111A
Operating Temperature -:
-
RDS(on):
3mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
39pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.5nF
Pd - Power Dissipation:
66W
Output Capacitance(Coss):
1.23nF
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
MS6001Y
Package:
PDFN5x6
Product Description
Product Overview
The MS6001Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Designed for high-frequency switching and synchronous applications, this MOSFET offers a robust and reliable solution for DC/DC converters. It features a 60V drain-source voltage, a continuous drain current of 111A at 25C, and a low on-resistance of 2.3m (typ.) at VGS = 10V. The device is characterized by its fast switching speed and is 100% EAS guaranteed, ensuring dependable performance in demanding environments. A green device option is also available.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Miracle Technology
- Device Availability: Green Device Available
- Guarantee: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage / Current Rating | 60V, 111A | |||||
| RDS(ON) | On-Resistance | VGS = 10V | 2.3 | 3.0 | m | |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | TA = 25C | 60 | V | ||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous | TC = 25C | 111 | A | ||
| ID | Drain Current-Continuous | TC = 100C | 70 | A | ||
| ID | Drain Current-Continuous | TA = 25C | 21 | A | ||
| ID | Drain Current-Continuous | TA = 70C | 17 | A | ||
| IDM | Drain Current-Pulsed | a | 222 | A | ||
| EAS | Avalanche Energy, Single pulse | b | 135 | mJ | ||
| IAS | Avalanche Current | 52 | A | |||
| PD | Total Power Dissipation | @ TC = 25C | 66 | W | ||
| PD | Total Power Dissipation | @ TC = 100C | 26 | W | ||
| PD | Total Power Dissipation | @ TA = 25C | 2.6 | W | ||
| PD | Total Power Dissipation | @ TA = 70C | 1.6 | W | ||
| TJ, TSTG | Junction and Storage Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance Junction-Case | 1.9 | C/W | |||
| RJA | Thermal Resistance Junction-Ambient | c | 49 | C/W | ||
| RJT | Thermal Resistance Junction-Top of package | c | 18 | C/W | ||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 60 | - | - | V |
| BVDSS/Tj | BVDSS Temperature Coefficient | ID = 1mA | - | -23 | - | mV/C |
| IDSS | Zero Gate Voltage Drain Current | VDS = 60V, VGS = 0V | - | - | 1 | A |
| IDSS | Zero Gate Voltage Drain Current | Tj = 55C | - | - | 5 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | - | 2.1 | - | V |
| VGS(th)/Tj | VGS(th) Temperature Coefficient | - | -7.1 | - | mV/C | |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A, Tj = 25C | - | 2.3 | 3.0 | m |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A, Tj = 125C | - | 3.5 | - | m |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 4.5V, ID = 20A, Tj = 25C | - | 3.5 | 4.5 | m |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 4.5V, ID = 20A, Tj = 125C | - | 4.9 | - | m |
| gfs | Forward Transconductance | VDS = 5V, ID = 20A | - | 90 | - | S |
| Dynamic Characteristics | ||||||
| Rg | Gate Resistance | f = 1.0MHz | - | 0.4 | - | |
| Ciss | Input Capacitance | VDS = 30V, VGS = 0V, f = 1.0MHz | - | 4500 | - | pF |
| Coss | Output Capacitance | - | 1230 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 39 | - | pF | |
| td(on) | Turn-On Delay Time | VDS = 30V, ID = 20A, RG = 3, VGS = 10V | - | 17 | - | ns |
| tr | Turn-On Rise Time | - | 29 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 54 | - | ns | |
| tf | Turn-Off Fall Time | - | 11 | - | ns | |
| Qg | Total Gate Charge | VDS = 30V, ID = 20A, VGS = 10V | - | 70 | - | nC |
| Qg | Total Gate Charge | VDS = 30V, ID = 20A, VGS = 4.5V | - | 34 | - | nC |
| Qgs | Gate-Source Charge | - | 16 | - | - | |
| Qgd | Gate-Drain Charge | - | 12 | - | - | |
| Vgp | Gate Plateau Voltage | - | 3.4 | - | V | |
| Drain-Source Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V, Force Current | - | - | 111 | A |
| ISM | Pulse Source Current | - | - | 222 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, ISD = 1A | - | 0.7 | 1.0 | V |
| trr | Reverse Recovery Time | IF= 20A,VGS = 0V, di/dt=100A/us | - | 51 | - | ns |
| Qrr | Reverse Recovery Charge | - | 50 | - | nC | |
2410122015_MIRACLE-POWER-MS6001Y_C17702010.pdf
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