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quality Power MOSFET MIRACLE POWER MJQ52N80F with 52A Drain Current and Advanced Super Junction Technology factory
quality Power MOSFET MIRACLE POWER MJQ52N80F with 52A Drain Current and Advanced Super Junction Technology factory

Power MOSFET MIRACLE POWER MJQ52N80F with 52A Drain Current and Advanced Super Junction Technology

Key Attributes
Model Number: MJQ52N80F
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
52A
RDS(on):
80mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@2250uA
Reverse Transfer Capacitance (Crss@Vds):
1.1pF
Output Capacitance(Coss):
136pF
Input Capacitance(Ciss):
3.804nF
Pd - Power Dissipation:
417W
Gate Charge(Qg):
102nC@13V
Mfr. Part #:
MJQ52N80F
Package:
TO-247
Product Description

Product Overview

The MJQ52N80F is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., engineered with Advanced Super Junction Technology for efficient and reliable performance. This MOSFET offers a high voltage rating of 800V and a continuous drain current of 52A, with a low on-resistance of 80m (typ.) at VGS = 10V. It features easy-to-control gate switching and is 100% avalanche tested, making it suitable for demanding applications. Key applications include PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and single-ended flyback or two-transistor forward topologies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Line: MJQ Series
  • Technology: Advanced Super Junction Technology
  • Channel Type: N-Channel
  • Testing: 100% Avalanche Tested

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage TC = 25C unless otherwise noted - - 800 V
VGS Gate-Source Voltage - - 30 - V
ID Drain Current-Continuous TC = 25C - - 52 A
ID Drain Current-Continuous TC = 100C - - 35 A
IDM Drain Current-Pulsed b - - 141 A
PD Maximum Power Dissipation TC = 25C - - 417 W
dv/dt Peak Diode Recovery dv/dt - - - - V/ns
EAS Single Pulsed Avalanche Energy c - - 781 mJ
TJ, TSTG Operating and Store Temperature Range - -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - - 0.3 - C/W
RJA Thermal Resistance, Junction to Ambient - - 62 - C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 800 - - V
IDSS Zero Gate Voltage Drain Current VDS = 800, VGS = 0V - - 3 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 3.2 - 4.2 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 27A - 80 92 m
Dynamic Characteristics
RG Gate Resistance f = 1.0MHz - 22 -
Ciss Input Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz - 3804 - pF
Coss Output Capacitance - - 136 - pF
Crss Reverse Transfer Capacitance VDS = 100V, VGS = 0V, f = 300KHz - 1.1 - -
On Characteristics (Continued)
td(on) Turn-On Delay Time VDD = 400V, VGS = 13V, ID = 55A, RG = 3.4 - 72 - ns
tr Turn-On Rise Time - - 75 - ns
td(off) Turn-Off Delay Time - - 60 - ns
tf Turn-Off Fall Time - - 28.1 - -
Qg Total Gate Charge VDD = 480V, VGS = 0 to 10V, ID = 55A - 102 - nC
Qgs Gate-Source Charge - - 30.5 - -
Qgd Gate-Drain Charge - - 37.4 - -
Drain-Source Diode Characteristics
VSD Drain-Source Diode Forward Voltage VGS = 0V, IF = 1A - 0.65 - V
Trr Body Diode Reverse Recovery Time VR = 400V, IF = 55A, dIF/dt = 100A/s - 178 - ns
Qrr Body Diode Reverse Recovery Charge VR = 400V, IF = 55A, dIF/dt = 100A/s - 1.81 - C
Irrm Peak reverse recovery current VR = 400V, IF = 55A, dIF/dt = 100A/s - 19 - A

2504151445_MIRACLE-POWER-MJQ52N80F_C47361100.pdf

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