Power Management MOSFET MIRACLE POWER MS0001Y N Channel Enhancement Mode for DC DC Converter Systems
Key Attributes
Model Number:
MS0001Y
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
109A
RDS(on):
5.7mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF
Input Capacitance(Ciss):
2.326nF
Output Capacitance(Coss):
1.16nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
MS0001Y
Package:
PDFN-8(5x6)
Product Description
Product Overview
The MS0001Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-frequency switching and synchronous applications. It features excellent RDS(on) and low gate charge, making it suitable for DC/DC converters and power management systems. This device is halogen-free and RoHS-compliant, with a 100% EAS guaranteed rating.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MOSFET
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Technology: Miracle Technology
- Certifications: Halogen-free; RoHS-compliant
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage/Current/Resistance | ||||||
| 100V, 109A, RDS(on)(Typ.) = 4.4m@VGS = 10V | ||||||
| Excellent RDS(on) and Low Gate Charge | ||||||
| 100% EAS Guaranteed | ||||||
| Application | ||||||
| High Frequency Switching and Synchronous | ||||||
| DC/DC Converter | ||||||
| Power Management | ||||||
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous (TC = 25C) | 109 | A | |||
| ID | Drain Current-Continuous (TC = 100C) | 69 | A | |||
| IDM | Drain Current-Pulsed b | 435 | A | |||
| PD | Maximum Power Dissipation (TC = 25C) | 125 | W | |||
| EAS | Single Pulsed Avalanche Energy c | 294 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 1.0 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 43 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 100 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 100V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 1.0 | - | 2.5 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A | - | 4.4 | 5.7 | m |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 4.5V, ID = 15A | - | 6.4 | 8.3 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | 1.0 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 1.0MHz | - | 2326 | - | pF |
| Coss | Output Capacitance | - | 1160 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 23 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 50V, VGS = 10V, ID = 20A, RGEN = 3.0 | - | 11 | - | ns |
| tr | Turn-On Rise Time | - | 20 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 30 | - | ns | |
| tf | Turn-Off Fall Time | - | 8 | - | ns | |
| Qg | Total Gate Charge | VDS = 50V, VGS = 0 to 10V, ID = 20A | - | 36 | - | nC |
| Qgs | Gate-Source Charge | - | 7.9 | - | nC | |
| Qgd | Gate-Drain Charge | - | 7.4 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 109 | A |
| ISM | Maximum Pulsed Current | - | - | 435 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 30A | - | 0.7 | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, dIF/dt = 100A/s | - | 52 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, dIF/dt = 100A/s | - | 66 | - | nC |
2504151445_MIRACLE-POWER-MS0001Y_C47361200.pdf
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