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quality N Channel Enhancement Mode MOSFET MIRACLE POWER MU4003X with 40V Drain Source Voltage and 30A Current factory
quality N Channel Enhancement Mode MOSFET MIRACLE POWER MU4003X with 40V Drain Source Voltage and 30A Current factory

N Channel Enhancement Mode MOSFET MIRACLE POWER MU4003X with 40V Drain Source Voltage and 30A Current

Key Attributes
Model Number: MU4003X
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
30A
RDS(on):
9.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
105pF
Input Capacitance(Ciss):
1.912nF
Pd - Power Dissipation:
26W
Output Capacitance(Coss):
126pF
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
MU4003X
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The MU4003X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 40V drain-source voltage, 30A continuous drain current, and a low RDS(on) of 7.4m (Typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, with 100% EAS guaranteed. It is halogen-free and RoHS-compliant, making it suitable for applications such as load switches, PWM applications, and power management.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: N-Channel Enhancement Mode MOSFET
  • Compliance: Halogen-free; RoHS-compliant

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage TC = 25C unless otherwise noted - - 40 V
VGS Gate-Source Voltage - - - ±20 V
ID Drain Current-Continuous TC = 25C - - 30 A
ID Drain Current-Continuous TC = 100C - - 19 A
IDM Drain Current-Pulsed - - - 120 A
PD Maximum Power Dissipation TC = 25C - - 26 W
EAS Single Pulsed Avalanche Energy - - - 64 mJ
TJ, TSTG Operating and Store Temperature Range - -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - - 4.8 - C/W
RJA Thermal Resistance, Junction to Ambient - - 43 - C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 40 - - V
IDSS Zero Gate Voltage Drain Current VDS = 40V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = ±20V - - ±100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1.0 - 2.5 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 30A - 7.4 9.5 m
RDS(on) Static Drain-Source On- Resistance VGS = 4.5V, ID = 20A - 10 13 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - 2.2 -
Ciss Input Capacitance VDS = 20V, VGS = 0V, f = 1.0MHz - 1912 - pF
Coss Output Capacitance - - 126 - pF
Crss Reverse Transfer Capacitance - - 105 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 20V, VGS = 10V, ID = 20A, RGEN = 3.0 - 8.0 - ns
tr Turn-On Rise Time - - 28 - ns
td(off) Turn-Off Delay Time - - 35 - ns
tf Turn-Off Fall Time - - 7.0 - ns
Qg Total Gate Charge VDS = 20V, VGS = 0 to 10V, ID = 20A - 37 - nC
Qgs Gate-Source Charge - - 8.0 - nC
Qgd Gate-Drain Charge - - 7.0 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 30 A
ISM Maximum Pulsed Current - - - 120 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.2 V
trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 10 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 5.0 - nC

2504151445_MIRACLE-POWER-MU4003X_C47361180.pdf
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