N Channel Enhancement Mode MOSFET MIRACLE POWER MU4003D with 40V Drain Source Voltage and 50A Current
Key Attributes
Model Number:
MU4003D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
50A
RDS(on):
13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
105pF
Input Capacitance(Ciss):
1.912nF
Output Capacitance(Coss):
126pF
Pd - Power Dissipation:
39W
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
MU4003D
Package:
TO-252
Product Description
Product Overview
The MU4003D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 40V drain-source voltage, 50A continuous drain current, and a low on-resistance (RDS(on) Typ. = 8.0m@VGS = 10V). This MOSFET offers excellent RDS(on) and low gate charge, with 100% EAS guaranteed. It is designed for applications such as load switches, PWM applications, and power management. The device is halogen-free and RoHS-compliant.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Compliance: Halogen-free; RoHS-compliant
Technical Specifications
| Parameter | Rating / Value | Unit |
|---|---|---|
| Features | ||
| Voltage | 40 | V |
| Current | 50 | A |
| RDS(on)(Typ.) @ VGS = 10V | 8.0 | m |
| EAS Guaranteed | 100% | |
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||
| Drain-Source Voltage (VDS) | 40 | V |
| Gate-Source Voltage (VGS) | 20 | V |
| Drain Current-Continuous (TC = 25C) (ID) | 50 | A |
| Drain Current-Continuous (TC = 100C) (ID) | 31 | A |
| Drain Current-Pulsed (IDM) | 200 | A |
| Maximum Power Dissipation (PD, TC = 25C) | 39 | W |
| Single Pulsed Avalanche Energy (EAS) | 76 | mJ |
| Operating and Store Temperature Range (TJ, TSTG) | -55 to 150 | C |
| Thermal Characteristics | ||
| Thermal Resistance, Junction to Case (RJC) | 3.2 | C/W |
| Thermal Resistance, Junction to Ambient (RJA) | 43 | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||
| Off Characteristics | ||
| Drain-Source Breakdown Voltage (BVDSS) (VGS = 0V, ID = 250A) | 40 | V |
| Zero Gate Voltage Drain Current (IDSS) (VDS = 40V, VGS = 0V) | 1.0 | A |
| Forward Gate Body Leakage Current (IGSS) (VDS = 0V, VGS = 20V) | 100 | nA |
| On Characteristics | ||
| Gate Threshold Voltage (VGS(th)) (VDS = VGS, ID = 250A) | 1.0 - 2.5 | V |
| Static Drain-Source On-Resistance (RDS(on)) (VGS = 10V, ID = 30A) | 8.0 - 10 | m |
| Static Drain-Source On-Resistance (RDS(on)) (VGS = 4.5V, ID = 20A) | 10.5 - 13 | m |
| Dynamic Characteristics | ||
| Gate Resistance (RG) (VDS = VGS = 0V, f = 1.0MHz) | 2.2 | |
| Input Capacitance (Ciss) (VDS = 20V, VGS = 0V, f = 1.0MHz) | 1912 | pF |
| Output Capacitance (Coss) | 126 | pF |
| Reverse Transfer Capacitance (Crss) | 105 | pF |
| Switching Characteristics | ||
| Turn-On Delay Time (td(on)) (VDD = 20V, VGS = 10V, ID = 20A, RGEN = 3.0) | 8.0 | ns |
| Turn-On Rise Time (tr) | 28 | ns |
| Turn-Off Delay Time (td(off)) | 35 | ns |
| Turn-Off Fall Time (tf) | 7.0 | ns |
| Total Gate Charge (Qg) (VDS = 20V, VGS = 0 to 10V, ID = 20A) | 37 | nC |
| Gate-Source Charge (Qgs) | 8.0 | nC |
| Gate-Drain Charge (Qgd) | 7.0 | nC |
| Drain-Source Diode Characteristics | ||
| Drain-Source Diode Forward Continuous Current (IS) (VG = VD = 0V, Force Current) | 50 | A |
| Maximum Pulsed Current (ISM) | 200 | A |
| Drain-Source Diode Forward Voltage (VSD) (VGS = 0V, IS = 30A) | 1.2 | V |
| Body Diode Reverse Recovery Time (Trr) (IF = 20A, dIF/dt = 100A/s) | 10 | ns |
| Body Diode Reverse Recovery Charge (Qrr) (IF = 20A, dIF/dt = 100A/s) | 5.0 | nC |
2504151445_MIRACLE-POWER-MU4003D_C47361179.pdf
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