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quality Low On Resistance Power MOSFET Miracle Power MPD04N65 with 650V and 4A Continuous Current Capability factory
quality Low On Resistance Power MOSFET Miracle Power MPD04N65 with 650V and 4A Continuous Current Capability factory

Low On Resistance Power MOSFET Miracle Power MPD04N65 with 650V and 4A Continuous Current Capability

Key Attributes
Model Number: MPD04N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.7Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.5pF
Number:
-
Input Capacitance(Ciss):
610pF
Output Capacitance(Coss):
53pF
Pd - Power Dissipation:
77W
Gate Charge(Qg):
14.2nC@10V
Mfr. Part #:
MPD04N65
Package:
TO-252
Product Description

Product Overview

The MPD04N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 650V breakdown voltage, a continuous drain current of 4A, and a low on-resistance of 2.3 (typ.) at VGS = 10V. This MOSFET offers low Crss and fast switching speeds, making it suitable for charger and standby power applications. It is 100% avalanche tested for enhanced reliability.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Power MOSFET
  • Technology: Miracle Technology
  • Package: TO-252

Technical Specifications

Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage, Current, RDS(ON) VGS = 10V - 2.3 -
Voltage - - - 650 V
Current (Continuous, TC=25C) - - - 4 A
Low Crss - - - - -
Fast Switching - - - - -
100% Avalanche Tested - - - - -
Absolute Maximum Ratings
Drain-Source Voltage (VDS) - - - 650 V
Gate-Source Voltage (VGS) - - - 30 V
Drain Current-Continuous (TC=25C) - - - 4 A
Drain Current-Continuous (TC=100C) - - - 2.5 A
Drain Current-Pulsed (IDM) - - - 16 A
Maximum Power Dissipation (PD @ TJ=25C) - - - 77 W
Single Pulsed Avalanche Energy (EAS) L = 10mH, VDD=50V, IAS = 6A, RG=25, Starting TJ=25 - 180 - mJ
Operating and Store Temperature Range (TJ, TSTG) - -55 - 150 C
Thermal Characteristics
Thermal Resistance, Junction-Case (RJC) Max. - - 1.62 C/W
Thermal Resistance Junction-Ambient (RJA) Max. - - 110 C/W
Off Characteristics
Drain-Source Breakdown Voltage (BVDSS) VGS = 0V, ID = 250A 650 - - V
Zero Gate Voltage Drain Current (IDSS) VDS = 650V, VGS = 0V - - 1 A
Forward Gate Body Leakage Current (IGSS) VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
Gate Threshold Voltage (VGS(th)) VDS = VGS, ID =250A 2 - 4 V
Static Drain-Source On- Resistance (RDS(on)) VGS = 10V, ID =2A - 2.3 2.7
Dynamic Characteristics
Input Capacitance (Ciss) VDS = 25V, VGS = 0V, f = 1.0MHz - 610 - pF
Output Capacitance (Coss) - - 53 - pF
Reverse Transfer Capacitance (Crss) - - 3.5 - pF
Switching Characteristics
Turn-On Delay Time (td(on)) VDD = 325V, ID =4A, RG = 25,VGS=10V - 12.7 - ns
Turn-On Rise Time (tr) - - 17.4 - ns
Turn-Off Delay Time (td(off)) - - 30.9 - ns
Turn-Off Fall Time (tf) - - 10.5 - ns
Gate Charge
Total Gate Charge (Qg) VDS = 520V, ID =4A, VGS = 10V - 14.2 - nC
Gate-Source Charge (Qgs) - - 5.5 - nC
Gate-Drain Charge (Qgd) - - 3.8 - nC
Drain-Source Diode Characteristics
Drain-Source Diode Forward Continuous Current (IS) VGS = 0V - - 4 A
Maximum Pulsed Current (ISM) VGS = 0V - - 16 A
Drain-Source Diode Forward Voltage (VSD) VGS = 0V, IS = 4A - - 1.4 V
Body Diode Reverse Recovery Time (Trr) di/dt=100A/us, IF=4A - 264 - ns

2410122025_MIRACLE-POWER-MPD04N65_C17701973.pdf

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