Enhanced Power MOSFET Minos MPT052N10P Featuring Low Conduction Loss and High Avalanche Ruggedness
Key Attributes
Model Number:
MPT052N10P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
RDS(on):
4.6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Pd - Power Dissipation:
173.6W
Output Capacitance(Coss):
878pF
Input Capacitance(Ciss):
5nF
Gate Charge(Qg):
74nC@10V
Mfr. Part #:
MPT052N10P
Package:
TO-220
Product Description
Product Description
The MPT052N10 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is an ideal device for synchronous rectification and high-speed switching applications, offering low on-resistance, fast switching speeds, low gate charge, low reverse transfer capacitances, and high avalanche ruggedness. The product is RoHS compliant.
Product Attributes
- Brand: MNS-KX (implied from www.mns-kx.com)
- Origin: Shenzhen, China (implied from contact information)
- Certifications: RoHS
Technical Specifications
| Parameter | Value | Unit | Conditions |
| Key Characteristics | |||
| VDS | 100 | V | |
| ID | 120 | A | |
| Rds(on) | <5.2 | m | VGS=10V (Typ: 4.6m) |
| Absolute Ratings | |||
| VDSS | 100 | V | |
| ID (Silicon Limited) | 127 | A | TC=25C |
| ID (Package Limited) | 120 | A | TC=25C |
| ID (TC=100C, Silicon Limited) | 80.7 | A | |
| IDM (Pulsed Drain Current) | 480 | A | Note1 |
| VGS | 20 | V | |
| EAS (Avalanche Energy) | 306 | mJ | Note2 |
| PD (Power Dissipation) | 173.6 | W | |
| TJ, Tstg (Operating & Storage Temp) | -55 to 150 | ||
| TL (Soldering Temp) | 260 | ||
| Thermal Characteristics | |||
| RJC (Junction-Case) | 0.72 | /W | |
| RJA (Junction-Ambient) | 62.5 | /W | |
| OFF Characteristics | |||
| VDSS (Breakdown Voltage) | 100 - 110 | V | VGS=0V, ID=250A |
| IDSS (Leakage Current) | 1 | A | VDS=100V, VGS=0V |
| IDSS (@TC=125C) | 100 | A | VDS=80V, VGS=0V |
| IGSS(F) (Gate-Source Forward) | 100 | nA | VGS=+20V |
| IGSS(R) (Gate-Source Reverse) | -100 | nA | VGS=-20V |
| ON Characteristics | |||
| RDS(on) | 4.6 - 5.2 | m | VGS=10V, ID=50A |
| VGS(th) (Gate Threshold Voltage) | 2 - 4 | V | VDS=VGS, ID=250A |
| Dynamic Characteristics | |||
| Ciss (Input Capacitance) | 5000 | pF | VDS=50V, VGS=0, f=1MHz |
| Coss (Output Capacitance) | 878 | pF | |
| Crss (Reverse Transfer Capacitance) | 75 | pF | |
| Qg (Total Gate Charge) | 74 | nC | VDD=50V, ID=50A, VGS=10V |
| Qgs (Gate-Source Charge) | 25 | nC | |
| Qgd (Gate-Drain Charge) | 14 | nC | |
| RG (Gate Resistance) | 1.7 | VGS=0, VDS=0 | |
| Switching Characteristics | |||
| td(on) (Turn-On Delay) | 24 | ns | VDD=50V, ID=50A, VGS=10V, RG=5, Resistive Load |
| tr (Rise Time) | 21 | ns | |
| td(off) (Turn-Off Delay) | 50 | ns | |
| tf (Fall Time) | 27 | ns | |
| Source-Drain Diode Characteristics | |||
| IS (Continuous Source Current) | 120 | A | |
| ISM (Maximum Pulsed Current) | 480 | A | |
| VSD (Diode Forward Voltage) | 1.2 | V | VGS=0V, IS=50A |
| Trr (Reverse Recovery Time) | 66 | ns | Is=50A,VGS=0, di/dt=100A/us |
| Qrr (Reverse Recovery Charge) | 150 | nC | |
| Ordering Information | |||
| Package | Product Code | Packing | |
| TO-220 | MPT052N10-P | Tube | |
| TO-263 | MPT052N10-S | Tape Reel | |
2507231135_Minos-MPT052N10P_C49424414.pdf
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