N Channel Power MOSFET MIRACLE POWER MJD08N80 with 100 Percent Avalanche Tested and Easy Gate Control
Key Attributes
Model Number:
MJD08N80
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
8A
RDS(on):
750mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
0.92pF
Input Capacitance(Ciss):
850.8pF
Pd - Power Dissipation:
113.6W
Output Capacitance(Coss):
34.4pF
Gate Charge(Qg):
18.5nC
Mfr. Part #:
MJD08N80
Package:
TO-252
Product Description
Product Overview
The MJD08N80 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., engineered with Advanced Super Junction Technology for efficient and reliable performance. It offers 800V breakdown voltage, 8A continuous drain current, and a low on-resistance of 0.62 (Typ.) at VGS = 10V. This MOSFET is designed for easy gate switching control and is 100% avalanche tested, making it suitable for demanding applications such as PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and single-ended flyback or two-transistor forward topologies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: N-Channel Power MOSFET
- Technology: Advanced Super Junction Technology
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Condition | Rating | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||
| VDS | Drain-Source Voltage | 800 | V | |
| VGS | Gate-Source Voltage | 30 | V | |
| ID | Drain Current-Continuous (TC = 25C) | 8 | A | |
| IDM | Drain Current-Pulsed | 24 | A | |
| PD | Maximum Power Dissipation (TC = 25C) | 113.6 | W | |
| dv/dt | Peak Diode Recovery dv/dt | 4 | V/ns | |
| EAS | Single Pulsed Avalanche Energy | 88 | mJ | |
| TJ, TSTG | Operating and Store Temperature Range | -55 to 150 | C | |
| Thermal Characteristics | ||||
| RJC | Thermal Resistance, Junction to Case | 1.1 | C/W | |
| RJA | Thermal Resistance, Junction to Ambient | 62 | C/W | |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||
| Off Characteristics | ||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 800 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 800V, VGS = 0V | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | 100 | nA |
| On Characteristics | ||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2.8 - 4.2 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 6.0A | 0.62 - 0.75 | |
| Dynamic Characteristics | ||||
| RG | Gate Resistance | f = 1.0MHz | 25 | |
| Ciss | Input Capacitance | VDS = 100V, VGS = 0V, f = 1.0MHz | 850.8 | pF |
| Coss | Output Capacitance | 34.4 | pF | |
| Crss | Reverse Transfer Capacitance | 0.92 | pF | |
| Switching Characteristics | ||||
| td(on) | Turn-On Delay Time | VDD = 400V, ID = 4.1A, VGS = 10V, RG = 50 | 40.6 | ns |
| tr | Turn-On Rise Time | 34.8 | ns | |
| td(off) | Turn-Off Delay Time | 128 | ns | |
| tf | Turn-Off Fall Time | 31 | ns | |
| Qg | Total Gate Charge | VDS = 400V, ID = 4.1A, VGS = 0 to10V | 18.5 | nC |
| Qgs | Gate-Source Charge | 5.0 | nC | |
| Qgd | Gate-Drain Charge | 6.6 | nC | |
| Drain-Source Diode Characteristics | ||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | 8 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | 24 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | 0.75 | V |
| Trr | Body Diode Reverse Recovery Time | IF=4.1A,VR = 400V, dIF/dt=100A/us | 266.5 | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF=4.1A,VR = 400V, dIF/dt=100A/us | 2.2 | C |
2504151445_MIRACLE-POWER-MJD08N80_C47361156.pdf
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