500V Breakdown Voltage N Channel MOSFET MIRACLE POWER MPD05N50A with Low Crss and Continuous Drain Current of 5A
Key Attributes
Model Number:
MPD05N50A
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Input Capacitance(Ciss):
584pF
Output Capacitance(Coss):
61pF
Pd - Power Dissipation:
77W
Gate Charge(Qg):
12.6nC@10V
Mfr. Part #:
MPD05N50A
Package:
TO-252
Product Description
Product Overview
The MPD05N50 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. It features a 500V breakdown voltage, a continuous drain current of 5A, and a low on-resistance of 1.35 (typ.) at VGS = 10V. This MOSFET offers fast switching speeds, low Crss, and is 100% avalanche tested, making it suitable for adaptors, standby power supplies, switching power supplies, and LED power applications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, On-Resistance | VGS = 10V | 1.35 | (RDS(ON)) | |||
| Breakdown Voltage | 500 | V | ||||
| Continuous Drain Current | TC = 25C | 5 | A | |||
| Continuous Drain Current | TC = 100C | 3.1 | A | |||
| Low Crss | ||||||
| Fast Switching | ||||||
| 100% Avalanche Tested | ||||||
| Applications | ||||||
| Adaptor | ||||||
| Standby Power | ||||||
| Switching power supply | ||||||
| LED Power | ||||||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C | 500 | V | ||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous | TC = 25C | 5 | A | ||
| ID | Drain Current-Continuous | TC = 100C | 3.1 | A | ||
| IDM | Drain Current-Pulsed | 20 | A | |||
| PD | Maximum Power Dissipation | TJ = 25C | 77 | W | ||
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns | |||
| EAS | Single Pulsed Avalanche Energy | 180 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Junction-to-Case | 1.62 | C/W | |||
| RJA | Junction-to-Ambient | 100 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 500 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 500V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | - | 4 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 2.5A | - | 1.35 | 1.6 | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 584 | - | pF |
| Coss | Output Capacitance | - | 61 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 4 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 250V, ID =5A, VGS=10V | - | 14 | - | ns |
| tr | Turn-On Rise Time | - | 18 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 32 | - | ns | |
| tf | Turn-Off Fall Time | - | 11 | - | ns | |
| Qg | Total Gate Charge | VDS = 400V, ID =5A, VGS = 10V | - | 12.6 | - | nC |
| Qgs | Gate-Source Charge | - | 3.1 | - | nC | |
| Qgd | Gate-Drain Charge | - | 4.9 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 5 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 20 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 5A | - | - | 1.4 | V |
| Trr | Body Diode Reverse Recovery Time | di/dt=100A/us, IS=5A,VGS = 0V | - | 320 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | di/dt=100A/us, IS=5A,VGS = 0V | - | 1550 | - | nC |
Notes:
a. TJ=+25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. ISD =5A, di/dt 100A/us,VDDBVDS, Start TJ=25
d. L = 10mH, VDD=50V,IAS = 6.0A,RG=25 Starting TJ=25
2504151445_MIRACLE-POWER-MPD05N50A_C47361151.pdf
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