N Channel MOSFET Minos MPG180N03S with Fast Switching Speed and High Avalanche Ruggedness Performance
Key Attributes
Model Number:
MPG180N03S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
N-Channel
Pd - Power Dissipation:
187W
Gate Charge(Qg):
56.9nC@10V
Mfr. Part #:
MPG180N03S
Package:
TO-263
Product Description
Product Overview
The MPG180N03S is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications, providing fast switching, low on-resistance, and high avalanche ruggedness.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Certifications: RoHS
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | |||||
| VDS | Drain-Source Voltage | -- | -- | 30 | V |
| VGS | Gate-Source Voltage | -- | -- | ±20 | V |
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | -- | -- | 180 | A |
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | -- | -- | 145 | A |
| IDM | Pulsed Drain Current | -- | -- | 500 | A |
| EAS | Single Pulse Avalanche Energy | -- | -- | 246 | mJ |
| IAS | Avalanche Current | -- | -- | 70.2 | A |
| PD@TC=25 | Total Power Dissipation | -- | -- | 187 | W |
| TSTG | Storage Temperature Range | -55 | -- | 175 | |
| TJ | Operating Junction Temperature Range | -55 | -- | 175 | |
| RJA | Thermal Resistance Junction-Ambient | -- | 62 | -- | /W |
| RJC | Thermal Resistance Junction-Case | -- | 0.8 | -- | /W |
| Electrical Characteristics | |||||
| BVDSS | Drain-Source Breakdown Voltage | 30 | -- | -- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | -- | 0.014 | -- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance (VGS=10V, ID=30A) | -- | 2.0 | 2.8 | m |
| Static Drain-Source On-Resistance (VGS=4.5V, ID=15A) | -- | 2.8 | 3.5 | V | |
| VGS(th) | Gate Threshold Voltage (VGS=VDS, ID =250uA) | 1.0 | 1.5 | 3.0 | V |
| VGS(th) | VGS(th) Temperature Coefficient | -- | -4 | -- | mV/ |
| IDSS | Drain-Source Leakage Current (VDS=24V, VGS=0V, TJ=25) | -- | -- | 1 | uA |
| Drain-Source Leakage Current (VDS=24V, VGS=0V, TJ=55) | -- | -- | 5 | uA | |
| IGSS | Gate-Source Leakage Current (VGS=±20V, VDS=0V) | -- | -- | ±100 | nA |
| gfs | Forward Transconductance (VDS=5V, ID=30A) | -- | 50 | -- | S |
| Rg | Gate Resistance (VDS=0V, VGS=0V, f=1MHz) | -- | 1.7 | -- | |
| Qg | Total Gate Charge (4.5V) (VDS=15V, VGS=10V, ID=15A) | -- | 56.9 | -- | nC |
| Qgs | Gate-Source Charge | -- | 13.8 | -- | -- |
| Qgd | Gate-Drain Charge | -- | 23.5 | -- | -- |
| Switching Time | Turn-On Delay Time (VDD=15V, VGS=10V, RG=3.3,ID=1A) | -- | 20.1 | -- | ns |
| Rise Time | -- | 6.3 | -- | -- | |
| Switching Time | Turn-Off Delay Time | -- | 124.6 | -- | ns |
| Fall Time | -- | 15.8 | -- | -- | |
| Capacitance | Input Capacitance (VDS=15V,VGS=0V, f=1MHz) | -- | 5850 | -- | pF |
| Output Capacitance | -- | 720 | -- | -- | |
| Reverse Transfer Capacitance | -- | 525 | -- | -- | |
| IS | Continuous Source Current (VG=VD=0V) | -- | -- | 205 | A |
| ISM | Pulsed Source Current | -- | -- | 500 | A |
| VSD | Diode Forward Voltage (VGS=0V, IS=1A, TJ=25) | -- | -- | 1.2 | V |
2509171410_Minos-MPG180N03S_C51933928.pdf
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