High Current Switching Silicon N Channel Power MOSFET Minos IRFP4468 with Low Conduction Loss Technology
Key Attributes
Model Number:
IRFP4468
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
261A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
532pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
11.132nF@50V
Pd - Power Dissipation:
312.5W
Gate Charge(Qg):
168nC@10V
Mfr. Part #:
IRFP4468
Package:
TO-247
Product Description
Silicon N-Channel Power MOSFET - IRFP4468
The IRFP4468 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is specifically designed for high-current switching applications and Battery Management Systems (BMS).
Product Attributes
- Brand: MNS-KX
- Product Code: IRFP4468
- Package: TO-247
- Certifications: RoHS product
Technical Specifications
| Parameter | Rating/Value | Units | Conditions |
| General Features | |||
| VDS | 100 | V | |
| ID | 261 | A | Silicon Limited |
| RDS(ON) | < 2.5 | m | @ VGS=10V |
| Avalanche Energy | 1225 | mJ | Note2: L=0.5mH, Ias=70A, Start TJ=25 |
| Power Dissipation | 312.5 | W | |
| ABSOLUTE RATINGS | |||
| Continuous Drain Current | 180 | A | Package Limited |
| Continuous Drain Current @TC=100C | 165.4 | A | Silicon Limited |
| Pulsed Drain Current | 720 | A | Note1: Pulse width limited by maximum junction temperature |
| Gate-Source Voltage | 20 | V | |
| Operating Junction and Storage Temperature Range | -55 to 150 | ||
| Maximum Temperature for Soldering | 260 | TL | |
| Thermal Characteristics | |||
| Thermal resistance, Junction-Case | 0.4 | /W | RJC |
| Thermal resistance, Junction-Ambient | 62.5 | /W | RJA |
| OFF Characteristics | |||
| Drain-Source Breakdown Voltage | 100-110 | V | VGS=0V, ID=250A |
| Drain-Source Leakage Current | 1 | A | VDS=100V, VGS=0V |
| Drain-Source Leakage Current @TC=125C | 100 | A | VDS=80V, VGS=0V |
| Gate-Source Forward Leakage | 100 | nA | VGS=+20V |
| Gate-Source Reverse Leakage | -100 | nA | VGS=-20V |
| ON Characteristics | |||
| Drain-Source On-Resistance | 2-2.5 | m | VGS=10V, ID=50A |
| Gate Threshold Voltage | 2-4 | V | VDS=VGS, ID=250A |
| Dynamic Characteristics | |||
| Input Capacitance | 11132 | pF | VDS=50V, VGS=0, f=1MHz |
| Output Capacitance | 2780 | pF | |
| Reverse Transfer Capacitance | 532 | pF | |
| Total Gate Charge | 168 | nC | VDD=50V, ID=100A, VGS=10V |
| Gate-Source charge | 59 | nC | |
| Gate-Drain charge | 35 | nC | |
| Gate resistance | 1 | VGS=0, VDS=0 | |
| Switching Characteristics | |||
| Turn-On Delay Time | 59 | ns | VDD=50V, ID=100A, VGS=10V, RG=1.6, Resistive Load |
| Rise Time | 66 | ns | |
| Turn-Off Delay Time | 185 | ns | |
| Fall Time | 95 | ns | |
| Source-Drain Diode Characteristics | |||
| Continuous Source Current | 180 | A | |
| Maximum Pulsed Current | 720 | A | |
| Diode Forward Voltage | 1.2 | V | VGS=0V, IS=50A |
| Reverse Recovery Time | 66 | ns | Is=100A, VGS=0, di/dt=100A/us |
| Reverse Recovery Charge | 200 | nC | |
2410171639_Minos-IRFP4468_C41433072.pdf
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