N Channel Enhancement Mode MOSFET MIRACLE POWER MU4004X with 40V Drain Source Voltage and 40A Current

Key Attributes
Model Number: MU4004X
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Pd - Power Dissipation:
113W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
MU4004X
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The MU4004X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology. It offers excellent RDS(on) and low gate charge, with a guaranteed 100% EAS rating. This MOSFET is designed for applications such as load switches, PWM applications, and power management, providing reliable performance with key specifications including 40V drain-source voltage and 40A continuous drain current.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Advanced Trench Technology
  • Mode: N-Channel Enhancement Mode

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous (TC = 25C) 40 A
ID Drain Current-Continuous (TC = 100C) 25 A
IDM Drain Current-Pulsed 160 A
PD Maximum Power Dissipation (TC = 25C) 113 W
EAS Single Pulsed Avalanche Energy 100 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 1.1 C/W
RJA Thermal Resistance, Junction to Ambient 45 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 40 - - V
IDSS Zero Gate Voltage Drain Current VDS = 40V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1.0 - 2.5 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 30A - 5.5 7.0 m
RDS(on) Static Drain-Source On-Resistance VGS = 4.5V, ID = 20A - 6.8 8.5 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - TBD -
Ciss Input Capacitance VDS = 20V, VGS = 0V, f = 1.0MHz - 2443 - pF
Coss Output Capacitance - 167 - pF
Crss Reverse Transfer Capacitance - 138 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 20V, VGS = 10V, ID = 20A, RGEN = 3.0 - 10 - ns
tr Turn-On Rise Time - 28 - ns
td(off) Turn-Off Delay Time - 40 - ns
tf Turn-Off Fall Time - 7 - ns
Qg Total Gate Charge VDS = 20V, VGS = 0 to 10V, ID = 20A - 48 - nC
Qgs Gate-Source Charge - 10 - nC
Qgd Gate-Drain Charge - 10 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 40 A
ISM Maximum Pulsed Current - - 160 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 11 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 5 - nC
Package Information (PDFN33)
Dimension Symbol Min Typ Max Unit
A 0.725 0.775 0.825 mm
B 0.28 0.38 0.48 mm
C 0.13 0.15 0.20 mm
D 3.05 3.15 3.25 mm
D1 0.10 mm
E 3.25 3.35 3.45 mm
E1 3.0 3.1 3.2 mm
e 0.60 0.65 0.70 mm
F 0.25 0.30 0.35 mm
H 1.63 1.73 1.83 mm
L 2.35 2.45 2.55 mm

2504151445_MIRACLE-POWER-MU4004X_C47361182.pdf

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