N Channel Enhancement Mode MOSFET MIRACLE POWER MU4004X with 40V Drain Source Voltage and 40A Current
Product Overview
The MU4004X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology. It offers excellent RDS(on) and low gate charge, with a guaranteed 100% EAS rating. This MOSFET is designed for applications such as load switches, PWM applications, and power management, providing reliable performance with key specifications including 40V drain-source voltage and 40A continuous drain current.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Advanced Trench Technology
- Mode: N-Channel Enhancement Mode
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous (TC = 25C) | 40 | A | |||
| ID | Drain Current-Continuous (TC = 100C) | 25 | A | |||
| IDM | Drain Current-Pulsed | 160 | A | |||
| PD | Maximum Power Dissipation (TC = 25C) | 113 | W | |||
| EAS | Single Pulsed Avalanche Energy | 100 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 1.1 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 45 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 40 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 40V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 1.0 | - | 2.5 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 30A | - | 5.5 | 7.0 | m |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 4.5V, ID = 20A | - | 6.8 | 8.5 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | TBD | - | |
| Ciss | Input Capacitance | VDS = 20V, VGS = 0V, f = 1.0MHz | - | 2443 | - | pF |
| Coss | Output Capacitance | - | 167 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 138 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 20V, VGS = 10V, ID = 20A, RGEN = 3.0 | - | 10 | - | ns |
| tr | Turn-On Rise Time | - | 28 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 40 | - | ns | |
| tf | Turn-Off Fall Time | - | 7 | - | ns | |
| Qg | Total Gate Charge | VDS = 20V, VGS = 0 to 10V, ID = 20A | - | 48 | - | nC |
| Qgs | Gate-Source Charge | - | 10 | - | nC | |
| Qgd | Gate-Drain Charge | - | 10 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 40 | A |
| ISM | Maximum Pulsed Current | - | - | 160 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, dIF/dt = 100A/s | - | 11 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, dIF/dt = 100A/s | - | 5 | - | nC |
| Package Information (PDFN33) | ||||||
| Dimension | Symbol | Min | Typ | Max | Unit | |
| A | 0.725 | 0.775 | 0.825 | mm | ||
| B | 0.28 | 0.38 | 0.48 | mm | ||
| C | 0.13 | 0.15 | 0.20 | mm | ||
| D | 3.05 | 3.15 | 3.25 | mm | ||
| D1 | 0.10 | mm | ||||
| E | 3.25 | 3.35 | 3.45 | mm | ||
| E1 | 3.0 | 3.1 | 3.2 | mm | ||
| e | 0.60 | 0.65 | 0.70 | mm | ||
| F | 0.25 | 0.30 | 0.35 | mm | ||
| H | 1.63 | 1.73 | 1.83 | mm | ||
| L | 2.35 | 2.45 | 2.55 | mm | ||
2504151445_MIRACLE-POWER-MU4004X_C47361182.pdf
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