High speed switching silicon MOSFET Minos MP20N40 ideal for SMPS and avalanche energy applications
Key Attributes
Model Number:
MP20N40
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
20A
RDS(on):
270mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.3pF
Number:
1 N-channel
Output Capacitance(Coss):
210pF
Input Capacitance(Ciss):
2.3nF
Pd - Power Dissipation:
278W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
MP20N40
Package:
TO-220
Product Description
Product Description
The MP20N40 is a silicon N-channel Enhanced MOSFET utilizing advanced technology to minimize conduction loss, enhance switching performance, and improve avalanche energy. It is ideally suited for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key features include fast switching, low Crss, 100% avalanche tested, and improved dv/dt capability.
Product Attributes
- Brand: MNS (Shenzhen Minos Technology Co., Ltd.)
- Certifications: RoHS product
Technical Specifications
| Parameter | Value | Unit | Description |
| VDS | 400 | V | Drain-to-Source Voltage |
| ID | 20 | A | Continuous Drain Current at TC = 25C |
| ID (TC=100C) | 12.6 | A | Continuous Drain Current at TC = 100C |
| IDM | 76 | A | Pulsed Drain Current |
| VGS | 30 | V | Gate-to-Source Voltage |
| EAS | 900 | mJ | Single Pulse Avalanche Energy |
| dv/dt | 5.0 | V/ns | Peak Diode Recovery dv/dt |
| PD (TO-220) | 278 | W | Power Dissipation at TC = 25C |
| TJ, Tstg | -55 to 150 | Operating Junction and Storage Temperature Range | |
| TL | 300 | Maximum Temperature for Soldering | |
| RJC | 0.45 | /W | Junction-to-Case Thermal Resistance |
| RJA | 62.5 | /W | Junction-to-Ambient Thermal Resistance |
| BVDSS | 400 | V | Drain to Source Breakdown Voltage (VGS=0V, ID=250A) |
| IDSS | 1 | A | Drain to Source Leakage Current (VDS=400V, VGS=0V, Tj=25C) |
| IGSS(F) | 100 | nA | Gate to Source Forward Leakage (VGS=+30V) |
| IGSS(R) | -100 | nA | Gate to Source Reverse Leakage (VGS=-30V) |
| RDS(ON) Typ | 0.22 | Drain-to-Source On-Resistance (VGS=10V, ID=4A) | |
| VGS(TH) | 2-4 | V | Gate Threshold Voltage (VDS = VGS, ID= 250A) |
| gfs | 10.0 | S | Forward Transconductance (VDS=15V, ID=9.5A) |
| Ciss | 2300 | PF | Input Capacitance (VGS=0V, VDS=25V, f=1.0MHz) |
| Coss | 210 | PF | Output Capacitance (VGS=0V, VDS=25V, f=1.0MHz) |
| Crss | 3.3 | PF | Reverse Transfer Capacitance (VGS=0V, VDS=25V, f=1.0MHz) |
| td(ON) | 32 | ns | Turn-on Delay Time (ID=20A, VDD=250V, VGS=10V, RG=10) |
| tr | 26 | ns | Rise Time (ID=20A, VDD=250V, VGS=10V, RG=10) |
| td(OFF) | 80 | ns | Turn-Off Delay Time (ID=20A, VDD=250V, VGS=10V, RG=10) |
| tf | 35 | ns | Fall Time (ID=20A, VDD=250V, VGS=10V, RG=10) |
| Qg | 40 | nC | Total Gate Charge (ID=20A, VDD=320V, VGS=10V) |
| Qgs | 12.5 | nC | Gate to Source Charge (ID=20A, VDD=320V, VGS=10V) |
| Qgd | 10.5 | nC | Gate to Drain (Miller)Charge (ID=20A, VDD=320V, VGS=10V) |
| IS | 20 | A | Continuous Source Current (Body Diode) at TC=25C |
| ISM | 76 | A | Maximum Pulsed Current (Body Diode) |
| VSD | 1.2 | V | Diode Forward Voltage (IS=20A, VGS=0V) |
| Trr | 285 | ns | Reverse Recovery Time (IS=20A, Tj=25C, dIF/dt=100A/us) |
| Qrr | 3900 | nC | Reverse Recovery Charge (IS=20A, Tj=25C, dIF/dt=100A/us) |
| Ordering Code | MP20N40-P | TO-220 Package, Tube Packing |
2410122024_Minos-MP20N40_C22389981.pdf
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