Durable silicon N channel MOSFET Minos IRF640 suitable for high speed switching and power dissipation
Key Attributes
Model Number:
IRF640
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
160mΩ@10V,7.5A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
130pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.32nF@0V
Pd - Power Dissipation:
130W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
IRF640
Package:
TO-220
Product Description
Product Overview
The IRF640 is a silicon N-channel Enhanced MOSFET designed using advanced MOSFET technology. This technology reduces conduction loss, improves switching performance, and enhances avalanche energy. It is suitable for SMPS, high-speed switching, and general-purpose applications, offering features like fast switching, low Crss, 100% avalanche testing, and improved dv/dt capability. This is a RoHS product.
Product Attributes
- Brand: Shenzhen Minos (implied by website and contact info)
- Origin: China (implied by contact info)
- Material: Silicon
- Certifications: RoHS
Technical Specifications
| Parameter | Value (TO-220/TO-251/TO-252) | Value (TO-220F) | Unit |
|---|---|---|---|
| VDS | 200 | 200 | V |
| ID (Continuous @ TC=25C) | 18 | 18 | A |
| ID (Continuous @ TC=100C) | 11 | 11 | A |
| IDM (Pulsed) | 72 | 72 | A |
| VGS | ±30 | ±30 | V |
| EAS (Single Pulse Avalanche Energy) | 580 | 580 | mJ |
| dv/dt (Peak Diode Recovery) | 5.0 | 5.0 | V/ns |
| PD (Power Dissipation) | 130 | 42 | W |
| Derating Factor above 25C | 1.2 | 0.33 | W/ |
| TJ, Tstg (Operating & Storage Temp) | -55 to 150 | -55 to 150 | |
| TL (Max Soldering Temp) | 300 | 300 | |
| RJC (Junction-to-Case) | 0.84 | 3.0 | /W |
| RJA (Junction-to-Ambient) | 62.5 | 62.5 | /W |
| VDS (Drain to Source Breakdown Voltage) | 200 (Min) | 200 (Min) | V |
| BVDSS/ TJ (Bvdss Temp Coefficient) | 0.25 (Typ) | 0.25 (Typ) | V/ |
| IDSS (Drain to Source Leakage Current @ 25C) | 1 (Max) | 1 (Max) | µA |
| IDSS (Drain to Source Leakage Current @ 125C) | 100 (Max) | 100 (Max) | µA |
| IGSS(F) (Gate to Source Forward Leakage) | 100 (Max) | 100 (Max) | nA |
| IGSS(R) (Gate to Source Reverse Leakage) | -100 (Max) | -100 (Max) | nA |
| RDS(ON) (Typ @ VGS=10V, ID=7.5A) | 0.12 | 0.12 | Ω |
| RDS(ON) (Max @ VGS=10V, ID=7.5A) | 0.16 | 0.16 | Ω |
| VGS(TH) (Gate Threshold Voltage) | 2.0 - 4.0 | 2.0 - 4.0 | V |
| gfs (Forward Transconductance) | 12 (Typ) | 12 (Typ) | S |
| Rg (Gate resistance) | 2 (Typ) | 2 (Typ) | Ω |
| Ciss (Input Capacitance) | 1320 (Typ) | 1320 (Typ) | PF |
| Coss (Output Capacitance) | 450 (Typ) | 450 (Typ) | PF |
| Crss (Reverse Transfer Capacitance) | 130 (Typ) | 130 (Typ) | PF |
| td(ON) (Turn-on Delay Time) | 15 (Typ) | 15 (Typ) | ns |
| Tr (Rise Time) | 52 (Typ) | 52 (Typ) | ns |
| td(OFF) (Turn-Off Delay Time) | 46 (Typ) | 46 (Typ) | ns |
| tf (Fall Time) | 37 (Typ) | 37 (Typ) | ns |
| Qg (Total Gate Charge) | 23 (Typ) | 23 (Typ) | nC |
| Qgs (Gate to Source Charge) | 8 (Typ) | 8 (Typ) | nC |
| Qgd (Gate to Drain Charge) | 6 (Typ) | 6 (Typ) | nC |
| IS (Continuous Source Current) | 18 | 18 | A |
| ISM (Maximum Pulsed Current) | 72 | 72 | A |
| VSD (Diode Forward Voltage) | 1.2 (Max) | 1.2 (Max) | V |
| Trr (Reverse Recovery Time) | 350 (Typ) | 350 (Typ) | ns |
| Qrr (Reverse Recovery Charge) | 3600 (Typ) | 3600 (Typ) | nC |
2410122024_Minos-IRF640_C7429903.pdf
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