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quality Halogen Free RoHS Compliant MIRACLE POWER MSE001C MOSFET for Uninterruptible Power Supplies and SMPS factory
quality Halogen Free RoHS Compliant MIRACLE POWER MSE001C MOSFET for Uninterruptible Power Supplies and SMPS factory

Halogen Free RoHS Compliant MIRACLE POWER MSE001C MOSFET for Uninterruptible Power Supplies and SMPS

Key Attributes
Model Number: MSE001C
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
84A
RDS(on):
10.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Pd - Power Dissipation:
178W
Output Capacitance(Coss):
323pF
Input Capacitance(Ciss):
3.569nF
Gate Charge(Qg):
53nC@10V
Mfr. Part #:
MSE001C
Package:
TO-220
Product Description

Product Overview

The MSE001C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Engineered with advanced technology, it offers excellent RDS(on) and low gate charge, making it ideal for high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, high-speed power supplies, and hard-switched, high-frequency circuits. This component is halogen-free and RoHS-compliant, with 100% EAS guaranteed for reliability.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Technology: Miracle Technology
  • Compliance: Halogen-free; RoHS-compliant
  • Testing: 100% EAS Guaranteed
  • Package: TO-220

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 150 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous TC = 25C 84 A
ID Drain Current-Continuous TC = 100C 59 A
IDM Drain Current-Pulsed 336 A
PD Maximum Power Dissipation TC = 25C 178 W
EAS Single Pulsed Avalanche Energy 576 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.7 C/W
RJA Thermal Resistance, Junction to Ambient 28 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 150 - - V
IDSS Zero Gate Voltage Drain Current VDS = 150V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.0 3.2 4.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 20A - 8.1 10.5 m
Dynamic Characteristics
Rg Gate Resistance f = 1MHz - 3.6 -
Ciss Input Capacitance VDS = 75V, VGS = 0V, f = 1.0MHz - 3569 - pF
Coss Output Capacitance - 323 - pF
Crss Reverse Transfer Capacitance - 14 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 75V, VGS = 10V, ID = 20A, RGEN = 3 - 16 - ns
tr Turn-On Rise Time - 29 - ns
td(off) Turn-Off Delay Time - 39 - ns
tf Turn-Off Fall Time - 16 - ns
Qg Total Gate Charge VDS = 75V, VGS = 0 to 10V, ID = 20A - 53 - nC
Qgs Gate-Source Charge - 19 - nC
Qgd Gate-Drain Charge - 12 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 84 A
ISM Maximum Pulsed Current - - 336 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 15A, dIF/dt = 100A/s - - 85 ns
Qrr Body Diode Reverse Recovery Charge IF = 15A, dIF/dt = 100A/s - - 253 nC

2504151445_MIRACLE-POWER-MSE001C_C47361112.pdf

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