Power MOSFET 650V 11A N Channel MIRACLE POWER MJF11N65 Suitable for PWM PFC and Telecom Applications
Key Attributes
Model Number:
MJF11N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
350mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
5.3pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
901pF@50V
Pd - Power Dissipation:
31W
Gate Charge(Qg):
22nC
Mfr. Part #:
MJF11N65
Package:
TO-220F
Product Description
Product Overview
The MJF11N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., engineered with advanced super junction technology. It offers a high breakdown voltage of 650V and a continuous drain current of 11A, with a low drain-source on-resistance of 0.32 (Typ.) at VGS = 10V. This MOSFET is designed for easy gate switching control and is suitable for various power applications including PFC stages, hard switching PWM stages, resonant switching PWM, PC power supplies, adaptors, LCD & PDP TVs, lighting, server power, telecom power, and UPS systems.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Advanced Super Junction Technology
- Channel Type: N-Channel
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | - | - | 650 | V |
| VGS | Gate-Source Voltage | - | - | ±30 | V | |
| ID | Drain Current-Continuous, TC =25C | - | - | 11 | A | |
| IDM | Drain Current-Pulsed | b | - | - | 33 | A |
| PD | Maximum Power Dissipation @ TJ =25C | - | - | 31 | W | |
| dv/dt | Peak Diode Recovery dv/dt | c | - | - | 15 | V/ns |
| EAS | Single Pulsed Avalanche Energy | d | - | - | 624 | mJ |
| TJ, TSTG | Operating and Store Temperature Range | -55 | - | 150 | °C | |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | - | 4.0 | - | °C/W | |
| RJA | Thermal Resistance, Junction to Ambient | - | 80 | - | °C/W | |
| Electrical Characteristics (TJ = 25°C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250μA | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1 | μA |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = ±30V | - | - | ±100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250μA | 2.8 | - | 4.2 | V |
| RDS(on) | Static Drain-Source On- Resistance | c VGS = 10V, ID = 5.5A | - | 0.32 | 0.35 | Ω |
| Dynamic Characteristics | ||||||
| Rg | Gate Resistance | f = 1.0MHz | - | 11 | - | Ω |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10KHz | - | 901 | - | pF |
| Coss | Output Capacitance | - | 59 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 5.3 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, ID =4.8A, VGS=13V, RG=3.4Ω | - | 7.2 | - | ns |
| tr | Turn-On Rise Time | - | 20.8 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 29.2 | - | ns | |
| tf | Turn-Off Fall Time | - | 19.2 | - | ns | |
| Qg | Total Gate Charge | VDS = 400V, ID =4.8A, VGS = 0 to10V | - | 22 | - | nC |
| Qgs | Gate-Source Charge | - | 5.8 | - | nC | |
| Qgd | Gate-Drain Charge | - | 12 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF=1A | - | 0.74 | - | V |
| Trr | Body Diode Reverse Recovery Time | IF=4.8A,VR = 400V dIF/dt=100A/us | - | 250 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF=4.8A,VR = 400V dIF/dt=100A/us | - | 2.57 | - | μC |
Notes:
a. TJ=+25 °C to +150 °C
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. Pulse width≤300μs; duty cycle≤2%
d. L=49.9mH, VDD=50V, IAS=5A,RG=25Ω Starting TJ=25 °C
2408011701_MIRACLE-POWER-MJF11N65_C34373727.pdf
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