Power Switching N Channel MOSFET Featuring Minos MDT40N10D with Low RDS ON and High Avalanche Energy
Key Attributes
Model Number:
MDT40N10D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
33A
Operating Temperature -:
-55℃~+175℃
RDS(on):
26mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
205pF
Number:
1 N-channel
Output Capacitance(Coss):
225pF
Pd - Power Dissipation:
70W
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
MDT40N10D
Package:
TO-252
Product Description
Product Overview
The MDT40N10D is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design contributes to lower RDS(ON), and it is fully characterized for avalanche voltage and current, ensuring good stability and uniformity with high EAS. The package is designed for effective heat dissipation.
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen Minos Technology Co., Ltd.
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | TA=25 | 33 | A | ||
| Drain Current-Pulsed | IDM | Note 1 | 100 | A | ||
| Maximum Power Dissipation | PD | Tc=25 | 70 | W | ||
| Single pulse avalanche energy | EAS | Note 2 | 96 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 3.5 | /W | |||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=12A, Note 3 | - | 22 | 26 | mΩ |
| Forward Transconductance | gFS | VDS=5V,ID=15A | - | 11 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V, VGS=0V, f=1.0MHz | - | 2550 | - | pF |
| Output Capacitance | Coss | - | 225 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 205 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=50V, ID=20A, VGS=10V, RGEN=10Ω | - | 29 | - | nS |
| Turn-on Rise Time | tr | - | 13 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 58.2 | - | nS | |
| Turn-Off Fall Time | tf | - | 13.4 | - | nS | |
| Total Gate Charge | Qg | VDS=80V,ID=20A, VGS=10V | - | 55 | - | nC |
| Gate-Source Charge | Qgs | - | 15 | - | nC | |
| Gate-Drain Charge | Qg d | - | 20 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=20A | - | - | 1.2 | V |
| Reverse Recovery Time | Trr | Tj=25,IF=10A, di/dt=100A/uS (note3) | - | 58 | - | nS |
| Reverse Recovery Charge | Qrr | - | 110 | - | nC | |
2411220027_Minos-MDT40N10D_C20624227.pdf
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