Power Management Device MIRACLE POWER MPF11N40 N Channel MOSFET with 400V 11A Continuous Drain Current
Key Attributes
Model Number:
MPF11N40
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
11A
RDS(on):
550mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Output Capacitance(Coss):
124pF
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
1.126nF
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
MPF11N40
Package:
TO-220F
Product Description
Product Overview
The MPF11N40 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for power switch circuits in adaptors and chargers. It features a 400V breakdown voltage, 11A continuous drain current, and a low on-resistance of 0.46 (typ.) at VGS = 10V. Key advantages include low Crss, fast switching speeds, and 100% avalanche tested for reliability. This MOSFET is engineered for efficient power management in demanding applications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: Power MOSFET
- Channel Type: N-Channel
- Technology: Miracle Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, On-Resistance | VGS = 10V | - | 0.46 | 0.55 | ||
| Drain-Source Voltage | - | - | - | 400 | V | |
| Gate-Source Voltage | - | - | 30 | V | ||
| ID | Drain Current-Continuous, TC =25C | - | - | 11 | - | A |
| ID | Drain Current-Continuous, TC =100C | - | - | 6.3 | - | A |
| IDM | Drain Current-Pulsed | - | - | 40 | - | A |
| PD | Maximum Power Dissipation @ TJ =25C | - | - | 35 | - | W |
| dv/dt | Peak Diode Recovery dv/dt | - | - | 5.0 | - | V/ns |
| EAS | Single Pulsed Avalanche Energy | - | - | 450 | - | mJ |
| TJ, TSTG | Operating and Store Temperature Range | - | -55 | - | 150 | C |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | - | - | 3.57 | - | C/W |
| RJA | Thermal Resistance, Junction to Ambient | - | - | 62.5 | - | C/W |
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 400 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 400V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | - | 4 | V |
| On Characteristics | ||||||
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 5.5A | - | 0.46 | 0.55 | |
| gfs | Forward Transconductance | VDS=15V, ID=5.5A | - | 8.5 | - | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 1126 | - | pF |
| Coss | Output Capacitance | - | - | 124 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 8 | - | pF |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 200V, ID =11A, VGS=10V | - | 18 | - | ns |
| tr | Turn-On Rise Time | - | - | 23 | - | ns |
| td(off) | Turn-Off Delay Time | - | - | 41 | - | ns |
| tf | Turn-Off Fall Time | - | - | 19 | - | ns |
| Qg | Total Gate Charge | VDS = 320V, ID =11A, VGS = 10V | - | 23 | - | nC |
| Qgs | Gate-Source Charge | - | - | 5.2 | - | nC |
| Qgd | Gate-Drain Charge | - | - | 8.5 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 10 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 40 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 11A | - | - | 1.5 | V |
| Trr | Body Diode Reverse Recovery Time | IS=11A,VGS = 0V dIF/dt=100A/us | - | 376 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IS=11A,VGS = 0V dIF/dt=100A/us | - | 2560 | - | nC |
2408011701_MIRACLE-POWER-MPF11N40_C34373718.pdf
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