Low resistance Minos AO3401S MOSFET with trench technology ensuring high current handling and operation
Key Attributes
Model Number:
AO3401S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@10V,4.2A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
65pF@15V
Number:
-
Input Capacitance(Ciss):
880pF@15V
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
8.5nC@4.5V
Mfr. Part #:
AO3401S
Package:
SOT-23
Product Description
Product Overview
The AO3401S is a MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 2.5V. It is suitable for load switch and general applications, providing high power and current handling capability.
Product Attributes
- Brand: Shenzhen Minos (implied by website and contact)
- Origin: China (implied by contact information)
- Certifications: RoHS Compliant, Lead-free termination
Technical Specifications
| Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Gate-Threshold Voltage | Vth(GS) | VDS=VGS, ID=-250uA | -0.7 | -1.3 | V | |
| Gate-body Leakage | IGSS | VDS=0V, VGS=10V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V, VGS=0V | -1 | uA | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-4.2A | 45 | 55 | m | |
| VGS=-4.5V, ID=-4A | 51 | 68 | m | |||
| VGS=-2.5V, ID=-1A | 65 | 88 | m | |||
| Forward Transconductance | gFS | VDS=-5V, ID=-4.2A | 10 | S | ||
| Capacitance | Ciss | VDS=-15V, VGS=0V, F=1MHz | 880 | pF | ||
| Coss | 105 | pF | ||||
| Crss | 65 | pF | ||||
| Switching Characteristics | td(on) | VDD= -15V, ID=-4.2A, VGS= -10V, RGEN=6 | 7 | nS | ||
| tr | 3 | nS | ||||
| td(off) | 30 | nS | ||||
| tf | 12 | nS | ||||
| Gate Charge | Qg | VDS= -15V, ID=-4.2A, VGS=-4.5V | 8.5 | nC | ||
| Qgs | 1.8 | nC | ||||
| Qgd | 2.7 | nC | ||||
| Diode Forward Voltage | VSD | VGS =0V, ID=-4.2A | -1.2 | V | ||
| Diode Forward Current | Is | -4.2 | A | |||
| Continuous Drain Current | ID | TA=25 | -4.2 | A | ||
| Pulsed Drain Current | IDM | -20 | A | |||
| Maximum Power Dissipation | PD | TA=25 | 1.2 | W | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | |||
| Thermal Resistance, Junction to Ambient | RQJA | 104 | /W |
2410122012_Minos-AO3401S_C19189949.pdf
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