Power MOSFET MIRACLE POWER MPW50N30 with 300V drain source voltage and 50A continuous current rating
Key Attributes
Model Number:
MPW50N30
Product Custom Attributes
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
50A
RDS(on):
80mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
1 N-channel
Output Capacitance(Coss):
220pF
Pd - Power Dissipation:
205W
Input Capacitance(Ciss):
4.086nF
Gate Charge(Qg):
81nC@10V
Mfr. Part #:
MPW50N30
Package:
TO-3PH
Product Description
Product Overview
The MPW50N30 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency switching applications. It features a 300V drain-source voltage, 50A continuous drain current, and a low on-resistance of 65m (typ.) at VGS = 10V. Key advantages include low Crss, fast switching speeds, and 100% avalanche testing. This MOSFET is ideal for use in high-efficiency switch-mode power supplies, DC-DC converters, power management for inverter systems, and power management for UPS.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MPW Series
- Technology: N-Channel Power MOSFET
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit | |||
|---|---|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||||||
| VDS | Drain-Source Voltage | 300 | V | ||||||
| VGS | Gate-Source Voltage | 30 | V | ||||||
| ID | Drain Current-Continuous, TC =25C | 50 | A | ||||||
| ID | Drain Current-Continuous, TC =100C | 30 | A | ||||||
| IDM | Drain Current-Pulsed | 150 | A | ||||||
| PD | Maximum Power Dissipation @ TJ =25C | 205 | W | ||||||
| dv/dt | Peak Diode Recovery dv/dt | 5 | V/ns | ||||||
| EAS | Single Pulsed Avalanche Energy | 720 | mJ | ||||||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | |||||
| Thermal Characteristics | |||||||||
| RJC | Thermal Resistance, Junction to Case | 0.61 | C/W | ||||||
| RJA | Thermal Resistance, Junction to Ambient | 43 | C/W | ||||||
| Electrical Characteristics | |||||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 300 | - | - | V | |||
| IDSS | Zero Gate Voltage Drain Current | VDS = 300V, VGS = 0V | - | - | 1 | A | |||
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA | |||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | 3 | 4 | V | |||
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 25A | - | 65 | 80 | m | |||
| gfs | Forward Transconductance | VDS = 15V, ID = 25A | - | 26.5 | - | S | |||
| Dynamic Characteristics | |||||||||
| Rg | Gate Series Resistance | f = 1.0MHz | - | 5 | - | ||||
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10KHz | - | 4086 | - | pF | |||
| Coss | Output Capacitance | - | 220 | - | pF | ||||
| Crss | Reverse Transfer Capacitance | - | 16 | - | pF | ||||
| Switching Characteristics | |||||||||
| td(on) | Turn-On Delay Time | VDD = 150V, ID =50A, VGS=10V RG=5 | - | 16 | - | ns | |||
| tr | Turn-On Rise Time | - | 47 | - | ns | ||||
| td(off) | Turn-Off Delay Time | - | 45 | - | ns | ||||
| tf | Turn-Off Fall Time | - | 15 | - | ns | ||||
| Qg | Total Gate Charge | VDS = 150V, ID =50A, VGS = 10V | - | 81 | - | nC | |||
| Qgs | Gate-Source Charge | - | 21 | - | nC | ||||
| Qgd | Gate-Drain Charge | - | 20 | - | nC | ||||
| Drain-Source Diode Characteristics | |||||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 50 | A | |||
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 150 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 50A | - | 0.9 | 2 | V | |||
| Trr | Body Diode Reverse Recovery Time | IS=50A,VGS = 0V dIF/dt=100A/us | - | 240 | - | ns | |||
| Qrr | Body Diode Reverse Recovery Charge | IS=50A,VGS = 0V dIF/dt=100A/us | - | 2053 | - | nC | |||
| Package Information (TO-247-3L) | |||||||||
| Symbol | Unit | Min | Nom | Max | Symbol | Unit | Min | Nom | Max |
| A | mm | 5.35 | 5.55 | 5.75 | E1 | mm | 9.80 | 10.0 | 10.2 |
| A1 | mm | 2.80 | 3.00 | 3.20 | E2 | mm | 3.80 | 4.00 | 4.20 |
| A2 | mm | 1.90 | 2.10 | 2.30 | H | mm | 24.3 | 24.5 | 24.7 |
| A3 | mm | 1.00 | 1.20 | 1.40 | H1 | mm | 9.80 | 10.0 | 10.2 |
| b | mm | 0.80 | 0.90 | 1.00 | H2 | mm | 14.3 | 14.5 | 14.7 |
| b1 | mm | 1.80 | 2.00 | 2.20 | H3 | mm | 18.5 | 19.0 | 19.5 |
| b2 | mm | 1.80 | 2.00 | 2.20 | H4 | mm | 2.00 | 2.20 | 2.40 |
| c | mm | 0.70 | 0.90 | 1.10 | H5 | mm | 24.0 | 24.5 | 25.0 |
| e | mm | 5.25 | 5.45 | 5.65 | P | mm | 3.30 | 3.50 | 3.70 |
| E | mm | 15.2 | 15.4 | 15.6 | G | mm | 4.3 | 4.5 | 4.7 |
2408011701_MIRACLE-POWER-MPW50N30_C34373716.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
