Power MOSFET Silicon P Channel Minos MDT30P10D Designed for Adapters Chargers and Switching Circuits
Key Attributes
Model Number:
MDT30P10D
Product Custom Attributes
Drain To Source Voltage:
110V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-
RDS(on):
26mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF
Number:
1 P-Channel
Output Capacitance(Coss):
190pF
Input Capacitance(Ciss):
2.315nF
Pd - Power Dissipation:
180W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
MDT30P10D
Package:
TO252
Product Description
Product Overview
The MDT30P10D is a Silicon P-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications, including power switching and adapters/chargers, offering low ON resistance and low reverse transfer capacitances. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen Minos ()
- Material: Silicon
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Breakdown Voltage | VDSS | -110 | V | |||
| Drain Current (continuous) | ID | at Tc=25 | -30 | A | ||
| Drain Current (pulsed) | IDM | -120 | A | |||
| Gate to Source Voltage | VGS | +/- | 20 | V | ||
| Total Dissipation | Ptot | at Tc=25 | 180 | W | ||
| Max. Operating Junction Temperature | Tj Max. | 175 | ||||
| Single Pulse Avalanche Energy | EAS | 700 | mJ | |||
| Electrical Parameters | ||||||
| Drain-source Voltage | VDS | VGS=0V, ID=-250A | -100 | V | ||
| Static Drain-to-Source on-Resistance | RDS(on) | VGS=-10V, ID=-15A | 26 | 32 | m | |
| Gated Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1.0 | -2.0 | -3.0 | V |
| Drain to Source leakage Current | IDSS | VDS=-110V, VGS = 0V | -1.0 | A | ||
| Gated Body Foward Leakage | IGSS(F) | VGS= +20V | 100 | nA | ||
| Gated Body Reverse Leakage | IGSS(R) | VGS = -20V | -100 | nA | ||
| Input Capacitance | Ciss | VGS =0V, VDS=25V, f=1.0MHZ | 2315 | pF | ||
| Output Capacitance | Coss | 190 | pF | |||
| Reverse Transfer Capacitance | Crss | 11 | pF | |||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-20V,ID=-16A, RG=10 | 28 | nS | ||
| Turn-on Rise Time | tr | 21 | nS | |||
| Turn-off Delay Time | td(off) | 62 | nS | |||
| Turn-off Fall Time | tf | 32 | nS | |||
| Total Gate Charge | Qg | VDS=-20V ID=-16A VGS=-10V | 40 | nC | ||
| Gate-Source Charge | Qgs | 9.2 | nC | |||
| Gate-Drain Charge | Qgd | 14 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| S-D Current(Body Diode) | ISD | -35 | A | |||
| Pulsed S-D Current(Body Diode) | ISDM | -140 | A | |||
| Diode Forward Voltage | VSD | VGS =0V, IDS=-35A | -1.5 | V | ||
| Reverse Recovery Time | trr | TJ=25,IF=-35A di/dt=100A/us | 555 | nS | ||
| Reverse Recovery Charge | Qrr | 4550 | C | |||
| Thermal Characteristics | ||||||
| Junction-to-Case | RJC | 2.5 | /W | |||
2504301112_Minos-MDT30P10D_C5452752.pdf
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