N Channel MOSFET MIRACLE POWER MU3001X 30V 64A Continuous Drain Current Low On Resistance
Key Attributes
Model Number:
MU3001X
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
64A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.9mΩ@4.5V,18A
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
212pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.859nF
Output Capacitance(Coss):
260pF
Pd - Power Dissipation:
31W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
MU3001X
Package:
PDFN3.3x3.3
Product Description
Product Overview
The MU3001X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-frequency switching and synchronous applications, including DC/DC converters. It offers a 30V drain-source voltage and a continuous drain current of 64A at 25C, with a low on-resistance of 4.1m (typ.) at VGS = 10V. This device is characterized by its reliable and rugged design, fast switching speed, and is 100% EAS guaranteed. A green device option is also available.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Miracle Technology
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | - | - | 30 | V |
| VGS | Gate-Source Voltage | Tc = 25C unless otherwise noted | - | - | ± 20 | V |
| ID | Drain Current-Continuous, Tc =25C | Tc = 25C unless otherwise noted | - | - | 64 | A |
| ID | Drain Current-Continuous, Tc =100C | Tc = 25C unless otherwise noted | - | - | 40 | A |
| IDM | Drain Current-Pulsed | a | - | - | 71 | A |
| EAS | Avalanche Energy, Single pulse | b | - | 39 | - | mJ |
| IAS | Avalanche Current | b | - | 28 | - | A |
| PD | Maximum Power Dissipation @ Tc =25C | Tc = 25C unless otherwise noted | - | - | 31 | W |
| TSTG | Store Temperature Range | Tc = 25C unless otherwise noted | -55 | - | 150 | C |
| TJ | Operating Junction Temperature Range | Tc = 25C unless otherwise noted | -55 | - | 150 | C |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance Junction-Case | Max | - | - | 4 | C/W |
| RJA | Thermal Resistance Junction-Ambient | Maxc | - | - | 60 | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 24V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = ±20V | - | - | ±100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 1.1 | - | 2.1 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 20A | - | 4.1 | 4.8 | m |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 4.5V, ID = 18A | - | 5.3 | 6.9 | m |
| gfs | Forward Transconductance | VDS= 5V, ID= 20A | - | 22 | - | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 15V, VGS = 0V, f = 1.0MHz | - | 1859 | - | pF |
| Coss | Output Capacitance | VDS = 15V, VGS = 0V, f = 1.0MHz | - | 260 | - | pF |
| Crss | Reverse Transfer Capacitance | VDS = 15V, VGS = 0V, f = 1.0MHz | - | 212 | - | pF |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 15V, ID =1A, RG = 6,VGS=10V | - | 9.6 | - | ns |
| tr | Turn-On Rise Time | VDS = 15V, ID =1A, RG = 6,VGS=10V | - | 23.4 | - | ns |
| td(off) | Turn-Off Delay Time | VDS = 15V, ID =1A, RG = 6,VGS=10V | - | 62.8 | - | ns |
| tf | Turn-Off Fall Time | VDS = 15V, ID =1A, RG = 6,VGS=10V | - | 23 | - | ns |
| Qg | Total Gate Charge | VDS = 25V, ID = 14A, VGS = 4.5V | - | 26 | - | nC |
| Qg | Total Gate Charge | VDS = 25V, ID = 14A, VGS = 10V | - | 48 | - | nC |
| Qgs | Gate-Source Charge | VDS = 25V, ID = 14A, VGS = 10V | - | 3.4 | - | - |
| Qgd | Gate-Drain Charge | VDS = 25V, ID = 14A, VGS = 10V | - | 14 | - | - |
| Drain-Source Diode Characteristics | ||||||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, ISD = 1A | - | - | 1.1 | V |
| trr | Reverse Recovery Time | IF= 2A, di/dt=100A/us, TJ=25C | - | 18.2 | - | ns |
| Qrr | Reverse Recovery Charge | IF= 2A, di/dt=100A/us, TJ=25C | - | 9.2 | - | nC |
2410122015_MIRACLE-POWER-MU3001X_C17702005.pdf
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