N Channel Power MOSFET with 650V Breakdown Voltage and 7A Continuous Drain Current MIRACLE POWER MPF07N65
Key Attributes
Model Number:
MPF07N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.4Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.6pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.135nF
Output Capacitance(Coss):
88pF
Pd - Power Dissipation:
35W
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
MPF07N65
Package:
TO-220F
Product Description
Product Overview
The MPF07N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. It features a 650V breakdown voltage, a continuous drain current of 7A, and a low on-resistance of 1.1 (typ.) at VGS = 10V. Key advantages include low Crss and fast switching capabilities, making it suitable for adapters, LCD panel power supplies, e-bike chargers, and switching mode power supplies. The device is 100% avalanche tested for enhanced reliability.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: Power MOSFET
- Technology: N-Channel
- Series: MPF07N65
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 650 | V | |||
| Gate-Source Voltage (VGS) | ±30 | V | |||
| Drain Current-Continuous (ID) @ TC =25°C | 7 | A | |||
| Drain Current-Continuous (ID) @ TC =100°C | 4 | A | |||
| Drain Current-Pulsed (IDM) | 28 | A | |||
| Maximum Power Dissipation (PD) @ TJ =25°C | 35 | W | |||
| Single Pulsed Avalanche Energy (EAS) | 245 | mJ | |||
| Operating and Store Temperature Range (TJ, TSTG) | -55 | 150 | °C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction-Case (RθJC) | 3.5 | °C/W | |||
| Thermal Resistance Junction-Ambient (RθJA) | 62.5 | °C/W | |||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250μA | 650 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 650V, VGS = 0V | - | - | 1 | μA |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = ±30V | - | - | ±100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, ID =250μA | 2 | - | 4 | V |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10V, ID =3.5A | - | 1.1 | 1.4 | Ω |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 1135 | - | pF |
| Output Capacitance (Coss) | - | 88 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 4.6 | - | pF | |
| Turn-On Delay Time (td(on)) | VDD = 325V, ID =7A, RG = 10Ω,VGS=10V | - | 19 | - | ns |
| Turn-On Rise Time (tr) | - | 21 | - | ns | |
| Turn-Off Delay Time (td(off)) | - | 42 | - | ns | |
| Turn-Off Fall Time (tf) | - | 19 | - | ns | |
| Total Gate Charge (Qg) | VDS = 520V, ID =7A, VGS = 10V | - | 24 | - | nC |
| Gate-Source Charge (Qgs) | - | 5.1 | - | nC | |
| Gate-Drain Charge (Qgd) | - | 9.5 | - | nC | |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | VGS = 0V | - | - | 7 | A |
| Maximum Pulsed Current (ISM) | VGS = 0V | - | - | 28 | A |
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IS = 7A | - | - | 1.4 | V |
| Body Diode Reverse Recovery Time (Trr) | IS=7A,VGS=0V, di/dt=100A/us | - | 370 | - | ns |
| Reverse Recovery Charge (Qrr) | - | 1920 | - | nC | |
2410122015_MIRACLE-POWER-MPF07N65_C17701982.pdf
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