Silicon N Channel MOSFET Minos IRFP240 Ideal for Switch Mode Power Supplies and High Speed Electronics

Key Attributes
Model Number: IRFP240
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ@10V,7.5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
130pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.32nF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
23nC
Mfr. Part #:
IRFP240
Package:
TO-247
Product Description

Product Overview

The IRFP240 is a silicon N-channel Enhanced MOSFET utilizing advanced technology to minimize conduction losses, enhance switching performance, and improve avalanche energy. It is well-suited for applications such as Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose electronics.

Product Attributes

  • Certifications: RoHS product

Technical Specifications

ParameterValueUnitDescription
VDS200VDrain-to-Source Voltage
ID18AContinuous Drain Current
ID (TC=100C)11AContinuous Drain Current at 100C
IDM72APulsed Drain Current
VGS30VGate-to-Source Voltage
EAS580mJSingle Pulse Avalanche Energy
dv/dt5.0V/nsPeak Diode Recovery dv/dt
PD (TO-247)130WPower Dissipation (TO-247 Package)
PD (TO-220F)42WPower Dissipation (TO-220F Package)
TJ, Tstg-55 to 150Operating Junction and Storage Temperature Range
TL300Maximum Temperature for Soldering
RDS(ON).Typ0.13Drain-to-Source On-Resistance (Typical)
VGS(TH)2.0 - 4.0VGate Threshold Voltage
Ciss1320PFInput Capacitance (Typical)
Coss450PFOutput Capacitance (Typical)
Crss130PFReverse Transfer Capacitance (Typical)
Qg23nCTotal Gate Charge (Typical)
VSD1.2VDiode Forward Voltage (Typical)
Trr350nsReverse Recovery Time (Typical)
Qrr3600nCReverse Recovery Charge (Typical)

2410122024_Minos-IRFP240_C5366134.pdf

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